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IP4283CZ10-TT,118

NXP Semiconductors

IP4283CZ10-TT,118 by NXP Semiconductors

IP4283CZ10-TT,118 by NXP Semiconductors is a unidirectional transient voltage suppressor diode with a breakdown voltage of 7.5 V and max clamping voltage of 8 V. It features a compact SO package with 10 terminals for efficient surface mounting. Ideal for protecting sensitive electronics from voltage spikes in various applications.

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5

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1k+

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Chip Stock

USA . 99,000 parts In-Stock

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USA . 1,117 parts In-Stock

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Prism Electronics

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One Stop Electronics

USA . 286 parts In-Stock

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AZTECH Wire

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Overview

Elevate your designs with the IP4283CZ10-TT,118 from NXP Semiconductors. Renowned for their excellence, NXP delivers a robust transient suppression device that ensures your circuits remain safe and reliable. With its compact form and superior performance, this diode provides outstanding voltage regulation, protecting sensitive components in various applications—from consumer electronics to industrial systems. Trust NXP for quality and innovation that enhances your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and protection against environmental factors, enhancing the reliability of the device.

Config: SINGLE

A single configuration ensures simplicity in integration, making it an excellent choice for compact designs.

Surface Mount: YES

Being surface mount compatible allows for easier assembly and reduced PCB space, supporting modern manufacturing processes.

Nominal Breakdown Voltage: 7.5 V

A nominal breakdown voltage of 7.5 V offers effective transient voltage protection tailored for low voltage circuits.

Package Shape: SQUARE

The square package shape facilitates effective mounting options, ensuring compatibility with various circuit layouts.

No. of Terminals: 10

Ten terminals provide versatile connectivity options, allowing for complex circuit configurations.

Package Style (Meter): SMALL OUTLINE

A small outline package style minimizes space requirements and contributes to overall compactness in device design.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality nickel palladium gold terminal finish ensures excellent conductivity and corrosion resistance for long-term performance.

Terminal Position: DUAL

Dual terminal positions provide greater flexibility for placement and routing on the PCB, improving design efficiency.

Minimum Breakdown Voltage: 6 V

The minimum breakdown voltage of 6 V ensures that the device activates at lower voltages, providing critical protection against surges.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum reflow time of 30 seconds means the device can withstand standard soldering processes without damage, enhancing manufacturability.

Peak Reflow Temperature: 260 C

The ability to tolerate high peak reflow temperatures ensures compatibility with modern soldering techniques and reduces thermal stress.

Maximum Breakdown Voltage: 9 V

With a maximum breakdown voltage of 9 V, this device provides a wide range of protection suitable for various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it is specifically designed to protect sensitive electronic components from voltage spikes.

Technology: ZENER

Utilizing Zener technology ensures reliable performance and effective clamping capabilities in transient suppression applications.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and excellent mechanical stability on PCBs.

Polarity: UNIDIRECTIONAL

Unidirectional polarity is ideal for most surge protection applications, ensuring correct installation and operation.

Maximum Clamping Voltage: 8 V

A maximum clamping voltage of 8 V helps prevent damage to downstream components during voltage transients.

Diode Element Material: SILICON

Silicon as the diode element material contributes to reliable performance, making it suitable for a wide range of applications.

Technical Specifications

Transient Suppression Devices IP4283CZ10-TT,118 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7.5 V

Maximum Clamping Voltage:

8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

10

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

IP4283CZ10-TT,118 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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