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HEF4512BDB

NXP Semiconductors

HEF4512BDB by NXP Semiconductors

HEF4512BDB by NXP Semiconductors is an 8-input CMOS multiplexer with a 5V nominal voltage and a propagation delay of 280 ns. It features a ceramic, glass-sealed package suitable for industrial applications. Operating b/w -40 °C to 85 °C, it ensures reliable performance in demanding environments.

Median Price

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Lifecycle Status

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Digiode

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Huijzer Components

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ECAB

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Native Components

USA . 547 parts In-Stock

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One Stop Electronics

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Corphita

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Northwest PG Solutions

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Overview

Elevate your projects with the HEF4512BDB from NXP Semiconductors, a trusted leader in innovation. This robust multiplexer/demultiplexer delivers exceptional performance across various applications, ensuring seamless signal management and reliability. With its durable ceramic package and wide operating temperature range, it's perfect for industrial environments. Experience improved efficiency and design flexibility, making the HEF4512BDB an invaluable asset to your next endeavor!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The durable construction ensures excellent protection against environmental factors, enhancing reliability in various applications.

No. of Inputs: 8

With 8 inputs, it provides flexibility for multiple signal sources, making it ideal for complex electronic designs.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient PCB layout and optimized space utilization in design.

Nominal Supply Voltage / Vsup: 5 V

Operating at a standard 5 V supply makes it compatible with most digital devices, simplifying integration into existing systems.

Load Capacitance (CL): 50 pF

A low load capacitance ensures faster signal switching times, making it suitable for high-speed applications.

No. of Terminals: 16

With 16 terminals, this device allows for versatile connections and makes it easier to handle multiple inputs and outputs.

Package Style (Meter): IN-LINE

An in-line package style facilitates easy installation and connection, enhancing user convenience.

Propagation Delay (tpd): 280 ns

A moderate propagation delay allows for sufficient speed in data transmission, suitable for various applications.

Maximum Operating Temperature: 85 °C

This higher temperature threshold ensures reliable operation in demanding industrial environments.

Output Characteristics: 3-STATE

The 3-state output capability enables efficient data handling, making it suitable for bus-oriented applications.

Minimum Operating Temperature: -40 °C

It can operate in extreme cold conditions, which is essential for outdoor and harsh environment applications.

Terminal Position: DUAL

Dual terminal positioning supports diverse mounting options, enhancing adaptability in various PCB layouts.

Maximum Seated Height: 5.08 mm

A compact seated height allows for space-efficient designs in confined areas.

Width: 7.62 mm

The width is ideal for standard PCB designs, ensuring compatibility with existing board layouts.

Output Polarity: TRUE

True output polarity simplifies signal interpretation and integration with digital systems.

Minimum Supply Voltage (Vsup): 3 V

The ability to operate at a minimum of 3 V enhances flexibility for battery-powered and low-voltage applications.

Temperature Grade: INDUSTRIAL

Designed for industrial temperature ranges, it guarantees robustness and reliability in challenging environments.

Technology: CMOS

CMOS technology is known for low power consumption and high noise immunity, making this device energy-efficient.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and reliable electrical connections, suitable for prototyping.

Terminal Pitch: 2.54 mm

The standard terminal pitch makes it easy to integrate into existing designs and ensures compatibility with standard PCB assembly processes.

Maximum Supply Voltage (Vsup): 15 V

This wide supply voltage range allows the device to be used in various applications, enhancing its versatility.

Technical Specifications

Multiplexer & Demultiplexer HEF4512BDB attributes and parameters. Explore more Multiplexer & Demultiplexer devices from NXP Semiconductors

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-GDIP-T16

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

1

No. of Inputs:

8

No. of Outputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Propagation Delay (tpd):

280 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

15 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

HEF4512BDB Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-12-314-0935, 5962123140935

NIIN

123140935

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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