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BZX384-B56,145

NXP Semiconductors

BZX384-B56,145 by NXP Semiconductors

NXP Semiconductors' BZX384-B56,145 Zener Diode has a nominal reference voltage of 56V with a max power dissipation of 0.3W. It operates in temperatures ranging from -65°C to 150°C and has a max voltage tolerance of 2%. This diode is commonly used in applications requiring precise voltage regulation in compact electronic circuits.

Median Price

$0.023

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 30,000 parts In-Stock

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$0.023

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$0.022

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$0.020

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-

30,000

$0.023

$0.022

$0.020

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Distributors (In-Stock)

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Digiode

USA . 50 parts In-Stock

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$0.022

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50

$0.022

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Vyrian

USA . 8,412 parts In-Stock

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8,412

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Anansix

USA . 2,435 parts In-Stock

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2,435

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Distributors (Availability)

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Corphita

USA . 1,138 parts In-Stock

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$0.021

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1,138

$0.021

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AZTECH Wire

Italy . 195 parts In-Stock

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$13.730

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195

$13.730

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Native Components

USA . 397 parts In-Stock

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$26.355

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397

$26.355

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Northwest PG Solutions

USA . 2,058 parts In-Stock

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$28.990

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$26.091

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2,058

$28.990

$26.091

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Continental Prestige Electronics

USA . 30,000 parts In-Stock

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$0.024

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UNI Independent Distributors

Spain . 4,830 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality BZX384-B56,145 Zener Diode by NXP Semiconductors. This small outline rectangular package offers a nominal reference voltage of 56V with a maximum voltage tolerance of 2%, ensuring precise performance in a wide range of applications. Whether you're working on power supplies, voltage regulation, or signal conditioning, this diode's unidirectional polarity and silicon element material guarantee reliable operation. Trust NXP Semiconductors for superior technology and innovative solutions that bring value and efficiency to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good protection for the diode and ensures durability.

Working Test Current: 2 mA

Low working test current enables efficient operation and reduces power consumption.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Package Shape: RECTANGULAR

Rectangular package shape makes it compatible with various circuit layouts.

Maximum Voltage Tolerance: 2 %

Low maximum voltage tolerance ensures accurate and precise voltage regulation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance even in harsh environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode can function in a wide range of temperature conditions.

Maximum Power Dissipation: 0.3 W

High maximum power dissipation capability ensures the diode can handle power spikes without damage.

Nominal Reference Voltage: 56 V

Precise nominal reference voltage of 56V ensures accurate voltage regulation in the circuit.

Terminal Form: GULL WING

Gull wing terminal form allows for easy soldering and secure connection to the circuit board.

Technical Specifications

Zener Diodes BZX384-B56,145 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Nominal Reference Voltage:

56 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2 %

Working Test Current:

2 mA

Trade Compliance

BZX384-B56,145 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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