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BZX384-C15,115

NXP Semiconductors

BZX384-C15,115 by NXP Semiconductors

The NXP Semiconductors BZX384-C15,115 is a Zener diode with a nominal reference voltage of 15V. It has a max power dissipation of 0.3W and operates in temperatures ranging from -65°C to 150°C. This diode is commonly used for voltage regulation in electronic circuits due to its unidirectional polarity and small outline package style.

Median Price

$0.027

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Farnell

UK . 999,000 parts In-Stock

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Newark

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Elektronika Sales Private Limited

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EBV Elektronik

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Chip1Stop

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Element14

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Digiode

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Nova Conductors

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Sensible Micro Corp

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Semicontronic

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Ampacity Inc.

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Lucentia Tech

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Overview

Discover the reliable and high-quality BZX384-C15,115 Zener diode by NXP Semiconductors. Designed with precision and expertise, this small outline rectagular package offers a nominal reference voltage of 15V with a maximum voltage tolerance of 5%. Perfect for a variety of applications, this diode provides customers with peace of mind knowing they are investing in a product that delivers consistent performance and reliability. Upgrade your electronic projects with the BZX384-C15,115 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Working Test Current: 5 mA

The low test current ensures efficient operation while providing accurate results.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Voltage Tolerance: 5 %

Provides a stable and reliable voltage output within a small tolerance range.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various environments and applications.

Maximum Power Dissipation: 0.3 W

Efficiently dissipates power to prevent overheating and ensure longevity.

Nominal Reference Voltage: 15 V

Provides a stable reference voltage of 15V for accurate circuit performance.

Technical Specifications

Zener Diodes BZX384-C15,115 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

200 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

15 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZX384-C15,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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