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BZX384-B10,115

NXP Semiconductors

BZX384-B10,115 by NXP Semiconductors

The NXP Semiconductors BZX384-B10,115 is a Zener diode with a nominal reference voltage of 10V and max power dissipation of 0.3W. It operates b/w -65 to 150°C, has a max voltage tolerance of 2%, and is suitable for applications requiring precise voltage regulation in compact electronic circuits.

Median Price

$0.022

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Arrow

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Chip1Stop

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Verical

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Rochester

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Flip Electronics

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Digiode

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Nova Conductors

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NAC Semi

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Cyclops Electronics Ltd

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ComSIT Distribution GmbH

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Vyrian

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IBS Electronics

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Semtec, LLC

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Inventory MP

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Semicontronic

India . 184,882 parts In-Stock

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Ampacity Inc.

Singapore . 85,911 parts In-Stock

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Corphita

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AZTECH Wire

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Argo Parts USA

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Continental Prestige Electronics

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Advanced Electronics

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Glotronic Ltd.

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Lucentia Tech

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Netroflash

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Overview

Unlock the power of reliable voltage regulation with the NXP Semiconductors BZX384-B10,115 Zener Diode. Manufactured by a trusted leader in semiconductor technology, this small outline diode offers a 10V nominal reference voltage with a maximum voltage tolerance of 2%. Whether you're designing precision electronic circuits or ensuring stable power supplies, this Zener diode provides the quality and performance you need. Trust NXP Semiconductors to deliver superior products that meet your demands for efficiency and reliability. Elevate your designs with the BZX384-B10,115 and experience the benefits of top-tier semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 5 mA

The low working test current allows for efficient performance and reliable operation.

Surface Mount: YES

The surface mount capability makes it easier to integrate this diode into circuit designs, saving space and simplifying assembly.

Maximum Voltage Tolerance: 2 %

The tight voltage tolerance ensures consistent and accurate performance in various applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for use in demanding environments without overheating.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature means this diode can be used in a wide range of conditions, even extreme cold.

Nominal Reference Voltage: 10 V

The specific reference voltage of 10V makes this diode suitable for applications that require a stable voltage reference.

Technical Specifications

Zener Diodes BZX384-B10,115 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

150 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

10 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2 %

Working Test Current:

5 mA

Trade Compliance

BZX384-B10,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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