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BZX384-C12,115

NXP Semiconductors

BZX384-C12,115 by NXP Semiconductors

NXP Semiconductors' BZX384-C12,115 Zener Diode has a nominal reference voltage of 12V and max power dissipation of 0.3W. With a working test current of 5mA, it is ideal for applications requiring precise voltage regulation in compact electronic circuits. The diode's small outline package and unidirectional polarity make it suitable for surface mount designs with limited space constraints.

Median Price

$0.027

Lifecycle Status

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27

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1k+

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Elektronika Sales Private Limited

India . 192,000 parts In-Stock

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Rochester

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EBV Elektronik

Germany . 126,000 parts In-Stock

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Avnet

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Chip1Stop

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Nova Conductors

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Maritex

Poland . 1,533 parts In-Stock

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NAC Semi

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Ampacity Inc.

Singapore . 84,778 parts In-Stock

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Italy . 8,860 parts In-Stock

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Overview

Enhance your electronic designs with the BZX384-C12,115 Zener Diode from NXP Semiconductors. This high-quality component offers precise voltage regulation and protection against voltage spikes, ensuring reliable performance in a wide range of applications. With a compact design and efficient operation, this Zener diode is perfect for use in power supplies, voltage regulators, and signal conditioning circuits. Trust NXP Semiconductors for superior quality and unmatched value in semiconductor components. Elevate your projects with the BZX384-C12,115 Zener Diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Working Test Current: 5 mA

Optimal current for testing and operating the diode efficiently.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Voltage Tolerance: 5 %

Provides reliable and consistent voltage regulation.

Minimum Operating Temperature: -65 °C

Suitable for a wide range of working environments, including extreme cold conditions.

Maximum Power Dissipation: 0.3 W

Can handle power dissipation effectively without damage.

Nominal Reference Voltage: 12 V

Provides a stable reference voltage for various applications.

Technical Specifications

Zener Diodes BZX384-C12,115 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

150 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZX384-C12,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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