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BZA868AL,115

NXP Semiconductors

BZA868AL,115 by NXP Semiconductors

NXP Semiconductors' BZA868AL,115 is a transient suppression device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 14W and breakdown voltage of 6.8V. Ideal for applications requiring protection against voltage transients in compact electronic circuits.

Median Price

$0.160

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 16,373 parts In-Stock

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$0.166

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$0.137

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$0.122

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$0.166

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$0.122

Verical

USA . 9,000 parts In-Stock

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$0.153

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$0.153

Distributors (In-Stock)

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Digiode

USA . 311 parts In-Stock

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$0.062

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Vyrian

USA . 7,446 parts In-Stock

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Zilex Electronics Inc.

Canada . 3,000 parts In-Stock

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Anansix

USA . 1,776 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 4,367 parts In-Stock

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$0.058

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Native Components

USA . 779 parts In-Stock

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$1.378

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Northwest PG Solutions

USA . 2,237 parts In-Stock

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$1.516

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AZTECH Wire

Italy . 552 parts In-Stock

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$19.740

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Continental Prestige Electronics

USA . 16,373 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,156 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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UNI Independent Distributors

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Overview

Discover the unparalleled protection and reliability of NXP Semiconductors' BZA868AL,115 transient suppression device. With a common anode configuration and four elements, this small outline package offers customers superior quality and peace of mind. Ideal for safeguarding sensitive electronics from voltage spikes, this diode's unidirectional polarity and avalanche technology ensure optimal performance. Trust NXP Semiconductors to deliver cutting-edge solutions that exceed expectations. Upgrade your devices with the BZA868AL,115 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the device, making it suitable for various environments.

Config: COMMON ANODE, 4 ELEMENTS

The common anode configuration with 4 elements allows for efficient transient suppression, providing reliable protection against voltage spikes.

Surface Mount: YES

Being surface mountable makes installation of the device easier and more convenient, saving time and effort during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 14 W

The high peak reverse power dissipation capability ensures robust protection against high voltage transients, making it a reliable choice for demanding applications.

Nominal Breakdown Voltage: 6.8 V

The nominal breakdown voltage of 6.8V provides effective suppression of transient voltage spikes, safeguarding sensitive components in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on a circuit board, optimizing space utilization and ensuring proper heat dissipation.

No. of Terminals: 5

Having 5 terminals offers flexibility in connectivity options, accommodating various circuit configurations for versatile application use.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space and reduces overall footprint, making it ideal for compact electronic devices.

Terminal Finish: TIN

The tin terminal finish ensures good solderability and reliable electrical connections, contributing to the overall durability of the device.

Maximum Power Dissipation: 0.3 W

With a maximum power dissipation of 0.3W, the device can effectively handle transient surges while maintaining stable operation within its power limits.

Maximum Time At Peak Reflow Temperature (s): 30

Ability to withstand peak reflow temperatures for up to 30 seconds allows for proper soldering and reworking processes, ensuring product reliability.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C corresponds to industry standard soldering temperatures, making it compatible with common assembly processes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, this device efficiently clamps voltage spikes and protects electronic circuits from damage, enhancing system reliability.

Technology: AVALANCHE

Utilizing avalanche technology enables rapid response to transient events, ensuring quick and effective suppression of voltage spikes to prevent damage to connected components.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and ease of handling during assembly, enhancing the overall reliability and robustness of the device.

No. of Elements: 4

Having 4 elements allows for distributed suppression of transient voltage spikes, offering enhanced protection across multiple circuit paths.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that voltage spikes are effectively clamped in one direction, preventing damage to sensitive components in the reverse bias direction.

Diode Element Material: SILICON

The silicon diode element material offers high performance and reliability in transient suppression, providing superior protection for electronic circuits.

Technical Specifications

Transient Suppression Devices BZA868AL,115 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Nominal Breakdown Voltage:

6.8 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

14 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BZA868AL,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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