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BZA862AL,115

NXP Semiconductors

BZA862AL,115 by NXP Semiconductors

NXP Semiconductors' BZA862AL,115 is a transient suppression device with 4 common anode elements. It has a breakdown voltage of 6.2V and can handle a max non-repetitive peak reverse power dissipation of 15W. Ideal for applications requiring protection against voltage transients in compact electronic circuits.

Median Price

$0.160

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,958 parts In-Stock

1+ parts

-

100+ parts

$0.166

1k+ parts

$0.137

10k+ parts

$0.122

15,958

-

$0.166

$0.137

$0.122

Verical

USA . 7,850 parts In-Stock

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$0.153

7,850

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-

-

$0.153

Distributors (In-Stock)

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Digiode

USA . 338 parts In-Stock

1+ parts

$0.062

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338

$0.062

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Vyrian

USA . 4,988 parts In-Stock

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4,988

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ACDS - Activité Composants Distribution Service

France . 900 parts In-Stock

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900

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Anansix

USA . 697 parts In-Stock

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697

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Distributors (Availability)

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Corphita

USA . 3,517 parts In-Stock

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$0.058

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3,517

$0.058

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Native Components

USA . 979 parts In-Stock

1+ parts

$0.379

100+ parts

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$0.364

979

$0.379

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$0.364

Northwest PG Solutions

USA . 1,474 parts In-Stock

1+ parts

$0.417

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$0.367

1,474

$0.417

-

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$0.367

AZTECH Wire

Italy . 45 parts In-Stock

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$17.230

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45

$17.230

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Continental Prestige Electronics

USA . 17,108 parts In-Stock

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$0.078

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17,108

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$0.078

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Perfect Parts

USA . 2,016 parts In-Stock

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2,016

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Cyclops Electronics Ltd (Excess)

UK . 900 parts In-Stock

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900

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Glotronic Ltd.

UK . 720 parts In-Stock

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720

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UNI Independent Distributors

Spain . 608 parts In-Stock

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608

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Overview

Discover the superior protection and reliability of the BZA862AL,115 transient suppression device by NXP Semiconductors. With a common anode configuration and four elements, this small outline package offers unmatched performance in safeguarding your circuits from voltage spikes. Ideal for a wide range of applications, this diode provides peace of mind with its high power dissipation capabilities and fast response time. Trust NXP Semiconductors to deliver quality products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, ensuring it can withstand various environmental conditions.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration with 4 elements allows for efficient transient suppression across multiple channels, enhancing overall performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 15 W

High maximum power dissipation capability ensures reliable protection against transient voltage spikes.

Nominal Breakdown Voltage: 6.2 V

The nominal breakdown voltage of 6.2 V indicates the threshold at which the device starts conducting and protecting against overvoltage.

Surface Mount: YES

Surface mount capability makes installation easy and reduces the overall footprint of the device in the circuit design.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy mounting and integration into various electronic devices.

No. of Terminals: 5

Having 5 terminals allows for versatile connection options, ensuring compatibility with different circuit layouts.

Package Style (Meter): SMALL OUTLINE

Small outline package style conserves space on the PCB and enables compact designs.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, enhancing the device's overall reliability.

Maximum Power Dissipation: 0.3 W

High maximum power dissipation ensures efficient heat dissipation and overall device longevity.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes indicates high-performance transient suppression capabilities, offering reliable protection against voltage surges.

Technology: AVALANCHE

Avalanche technology allows for quick response and high endurance against transient voltage events, ensuring robust protection for sensitive electronics.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and secure attachment to the PCB, enhancing overall device reliability.

No. of Elements: 4

Having 4 elements allows for effective transient suppression across multiple channels, increasing the device's overall protection capabilities.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that voltage spikes are effectively clamped in one direction, providing focused protection for sensitive components.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability in transient suppression applications, ensuring consistent protection over time.

Technical Specifications

Transient Suppression Devices BZA862AL,115 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Nominal Breakdown Voltage:

6.2 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

15 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BZA862AL,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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