Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The NXP Semiconductors BUK7Y12-100EX is a single N-channel power FET with 85A max drain current and 238W max power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation, such as automotive systems and industrial controls.
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N-channel FETs generally offer lower on-state resistance and higher efficiency, making them suitable for high power applications.
Single configuration is simpler and easier to control, making it suitable for straightforward applications.
Surface mount technology allows for compact size and efficient PCB layout, ideal for space-constrained designs.
Enhancement mode FETs provide faster operation and better performance in switching applications.
High maximum drain current capability allows for handling high power loads and currents.
With high power dissipation capability, this FET can handle high power levels without overheating.
Metal-oxide semiconductor technology offers good performance and reliability for power applications.
High maximum operating temperature ensures the FET can operate reliably in challenging environments.
Tin terminals provide good solderability and durability for long-term reliability.
Short time at peak reflow temperature helps prevent damage to the FET during soldering processes.
High peak reflow temperature allows for effective soldering and reliable connections to the PCB.
Power Field Effect Transistors (FET) BUK7Y12-100EX attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
Operating Mode:
Maximum Operating Temperature:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Maximum Time At Peak Reflow Temperature (s):
BUK7Y12-100EX Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - TrenchMOS Silicon Process 19/Sep/2014
PCN Packaging - Logo 10/Dec/2016 All Dev Label Chgs 2/Aug/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LM555CM
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BAV99
Lite-on Technology
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us;
MMBT3906LT1G
Onsemi
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
M39029/56351
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/56351 is a CRIMP contact type backshell accessory compliant with MIL-DTL-38999. It features FEMALE gender contacts, compatible with M39029/58363 mating contacts. The insertion and removal tools required are M81969/14-10 and M22520/2-10 respectively, making it ideal for military connector applications.
OPA2227UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
2N7002
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
SMBJ18CA
KYOCERA AVX
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ECS-.327-12.5-17X-TR
Ecs International
ECS-0.327-12.5-17X-TR by Ecs International is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing in temperature ranges from -40 to 85 °C, such as telecommunications and industrial automation.
E8WSDC12-32.768KTR
Abracon
Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.
SS14
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
NE555D
Philips Semiconductors
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRA160T3G
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
FDD5614P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
ABS25-32.768KHZ-1-T
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
1N4148
Panjit International
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
PSMN4R8-100BSEJ
NXP Semiconductors
PSMN4R8-100BSEJ by NXP is a single N-channel power FET with 120A max drain current and 405W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as automotive systems or industrial equipment.
RFD14N05LSM9A
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Qualification: Not Qualified; Maximum Turn Off Time (toff): 100 ns;
BSC160N15NS5ATMA1
Infineon Technologies
BSC160N15NS5ATMA1 by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 224A and 0.016 ohm Drain-Source On Resistance. The transistor's METAL-OXIDE SEMICONDUCTOR technology and SILICON material make it reliable for high-power operations.
AOD4185
Alpha & Omega Semiconductor
AOD4185 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage, 115A IDM, and 0.015 ohm RDS(ON). Ideal for power management applications requiring high drain current capabilities in a compact SMALL OUTLINE package.
AUIRF7316QTR
International Rectifier
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.9 A; No. of Terminals: 8;
BSC011N03LSIATMA1
Infineon's BSC011N03LSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0015 ohm RDS(on), and 100mJ EAS rating. Its small outline package and DUAL terminal position make it suitable for various power management systems.
IRLML2030TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
RJK0651DPB-00#J5
Renesas Electronics
Renesas Electronics RJK0651DPB-00#J5 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. Features include 100A max pulsed drain current, 11.7mJ avalanche energy rating, and 0.018 ohm max drain-source resistance. Its small outline package and nickel palladium gold finish make it suitable for high-power enhancement mode operations up to 150°C.
FDS4465
FDS4465 by Onsemi is a P-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 13.5A and max power dissipation of 2.5W.
FDBL86062_F085
Fairchild Semiconductor's FDBL86062_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features an EAS of 352mJ, 0.002 ohm On Resistance, and operates in ENHANCEMENT MODE.
IRF7304TRPBF
IRF7304TRPBF by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.6A ID. It features a built-in diode, 0.09 ohm RDS(on), and operates in enhancement mode. Ideal for power management applications requiring high drain current capabilities in compact designs.
BSS138BKS,115
NXP Semiconductors' BSS138BKS,115 is an N-CHANNEL Power FET with 0.32A max drain current and 0.99W power dissipation. Ideal for surface mount applications, it operates in enhancement mode at up to 150°C.
IPB64N25S320ATMA1
Infineon's IPB64N25S320ATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 64A max drain current, and 0.02 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 256A IDM rating.
SI7252DP-T1-GE3
Vishay Intertechnology's SI7252DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. Featuring separate elements with built-in diode, it has 80A max pulsed drain current and 0.017 ohm max drain-source resistance. Its small outline package and matte tin finish make it suitable for surface mount designs.
IRFP450PBF
Vishay Intertechnology's IRFP450PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 180W and operates in ENHANCEMENT MODE at up to 150°C.
SPP08N80C3
SPP08N80C3 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high power dissipation and temperature resistance.
IRFP460PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain-Source On Resistance: .27 ohm; Avalanche Energy Rating (EAS): 960 mJ;
LND150N8-G
Microchip Technology
LND150N8-G by Microchip is a N-CHANNEL FET with 0.03A IDM, ideal for SWITCHING applications. Operating in DEPLETION MODE, it has a 1.6W power dissipation and 1000 ohm RDS(on). With a peak temperature of 260C, it's suitable for surface mount designs in various electronic systems.
BSZ100N06LS3GATMA1
BSZ100N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.0179 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, Surface Mountable, with DUAL terminals and DRAIN case connection.
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BUK7D25-40EX
Power Field-Effect Transistors; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BUK7K32-100EX
BUK7K32-100EX by Nexperia is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH DIODE, 116A IDM, and 0.0275 ohm Drain-Source Resistance. This SMALL OUTLINE transistor has a METAL-OXIDE SEMICONDUCTOR technology and is suitable for AEC-Q101 standards.
BUK7K134-100EX
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Reference Standard: AEC-Q101; IEC-60134; Package Style (Meter): SMALL OUTLINE;
BUK7K15-80EX
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE;
BUK7Y12-100EX
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .012 ohm; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 339 A;
BUK7K25-40E,115
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 32 W; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Case Connection: DRAIN; Additional Features: AVALANCHE RATED;
BUK7Y7R8-80EX
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 238 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 100 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 148 mJ;
BUK7K35-60EX
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 20.7 A; Package Style (Meter): SMALL OUTLINE; No. of Elements: 2;
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Drain Current (Abs) (ID): 20.7 A; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BUK7K25-40E
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Pulsed Drain Current (IDM): 107 A; Maximum Drain Current (ID): 27 A;
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
BUK7Y4R8-60EX
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Application: SWITCHING; Terminal Form: GULL WING;
BUK7Y4R8-60EX by NXP Semiconductors is a single N-channel power FET with 100A max drain current and 238W max power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation, such as automotive systems and industrial controls.
BUK766R0-60E,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Additional Features: AVALANCHE RATED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NXP Semiconductors' BUK766R0-60E,118 is an N-channel Power FET with 75A max drain current and 182W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation. Suitable for surface mount configurations with a max operating temperature of 175°C.
BUK7Y9R9-80EX
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Additional Features: AVALANCHE RATED; No. of Elements: 1;
The NXP Semiconductors BUK7Y9R9-80EX is a single N-channel power FET with 89A max drain current and 195W max power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation, such as automotive systems and industrial controls.
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