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BSP230115

NXP Semiconductors

BSP230115 by NXP Semiconductors

NXP Semiconductors' BSP230115 is a P-CHANNEL FET with 300V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 4 terminals, GULL WING form, and 17 ohm RDS(on), it offers efficient performance in small outline packages.

Median Price

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6

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Adafruit Industries

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Vyrian

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Nova Conductors

Japan . 750 parts In-Stock

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Corohmni

South Africa . 332 parts In-Stock

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Ampacity Inc.

Singapore . 50 parts In-Stock

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AZTECH Wire

Italy . 225 parts In-Stock

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Semicontronic

India . 50 parts In-Stock

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Continental Prestige Electronics

USA . 4,720 parts In-Stock

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Argo Parts USA

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Overview

Unlock the power of cutting-edge technology with the BSP230115 by NXP Semiconductors. Crafted with precision and expertise, this P-CHANNEL Small Signal Field Effect Transistor is the perfect solution for your switching applications. With a robust design and high-quality materials, this transistor offers unparalleled performance and reliability. Say goodbye to inefficiency and hello to seamless operation with the BSP230115. Embrace innovation and elevate your projects to new heights with this exceptional component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching operations and low power consumption, making it suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by combining the transistor with a diode in a single package.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and high efficiency.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 300 V

Can handle high voltage requirements, making it suitable for applications that require a high level of voltage tolerance.

Package Shape: RECTANGULAR

Optimizes space utilization on circuit boards and allows for efficient placement in a compact layout.

Terminal Form: GULL WING

Facilitates easy soldering and provides a strong mechanical connection to the circuit board.

Operating Mode: ENHANCEMENT MODE

Offers precise control over the transistor's operation, ensuring reliability and consistent performance.

No. of Terminals: 4

Provides multiple connection points for versatile circuit configurations and integration into various systems.

Package Style (Meter): SMALL OUTLINE

Offers a compact form factor for space-constrained applications, allowing for efficient use of board space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high efficiency and fast response times, making it ideal for high-frequency applications.

Transistor Element Material: SILICON

Offers reliable performance and high temperature tolerance, ensuring long-term stability.

Maximum Drain Current (ID): 0.21 A

Suitable for low-power applications and provides sufficient current handling capacity for various circuits.

Maximum Drain-Source On Resistance: 17 ohm

Low on-resistance ensures minimal power loss and efficient operation, enhancing overall performance.

Terminal Position: DUAL

Provides multiple connection options for flexibility in circuit design and compatibility with different systems.

Case Connection: DRAIN

Offers a specific terminal connection for efficient current flow and heat dissipation, ensuring reliable operation.

Maximum Feedback Capacitance (Crss): 15 pF

Low feedback capacitance minimizes signal distortion and improves overall signal integrity in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSP230115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

300 V

Maximum Drain Current (ID):

.21 A

Maximum Drain-Source On Resistance:

17 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSP230115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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