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BSP220,115

NXP Semiconductors

BSP220,115 by NXP Semiconductors

NXP Semiconductors' BSP220,115 is a P-CHANNEL FET for SWITCHING applications. It features a 240V DS Breakdown Voltage, 0.225A Drain Current, and 20 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in high-temp environments up to 150°C.

Median Price

$0.504

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 29,273 parts In-Stock

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-

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$0.571

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$0.474

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$0.423

29,273

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$0.571

$0.474

$0.423

DigiKey

USA . 29,273 parts In-Stock

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$0.710

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$0.710

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Verical

USA . 15,000 parts In-Stock

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$0.593

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$0.528

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$0.593

$0.528

Future Electronics

Canada . 5,000 parts In-Stock

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$0.200

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$0.193

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$0.200

$0.193

Arrow

USA . 4,000 parts In-Stock

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$0.339

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$0.198

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$0.339

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Farnell

UK . 107 parts In-Stock

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$0.438

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$0.329

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Chip1Stop

Japan . 30 parts In-Stock

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Digiode

USA . 1,448 parts In-Stock

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$0.230

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$0.230

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TME

Poland . 308 parts In-Stock

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$1.210

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$0.581

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Chip Stock

USA . 160,000 parts In-Stock

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Vyrian

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IBS Electronics

USA . 5,000 parts In-Stock

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$0.286

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$0.273

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$0.273

NAC Semi

USA . 4,000 parts In-Stock

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$0.333

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$0.308

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$0.308

Anansix

USA . 2,721 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 495 parts In-Stock

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Ampacity Inc.

Singapore . 6,909 parts In-Stock

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Corphita

USA . 2,474 parts In-Stock

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$0.218

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AZTECH Wire

Italy . 7,821 parts In-Stock

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$0.390

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Continental Prestige Electronics

USA . 3,531 parts In-Stock

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$0.585

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$0.397

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$0.249

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$0.234

3,531

$0.585

$0.397

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$0.234

Microchip USA

USA . 433 parts In-Stock

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$2.390

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$2.380

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$2.380

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$2.370

433

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$2.380

$2.370

QUARKTWIN TECHNOLOGY LTD

USA . 6,775 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

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Perfect Parts

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UNI Independent Distributors

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Eastek

USA . 4,000 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Unlock the power of cutting-edge technology with the BSP220,115 by NXP Semiconductors. This high-quality Small Signal Field Effect Transistor boasts a P-CHANNEL configuration with a built-in diode for enhanced performance in switching applications. With a maximum DS Breakdown Voltage of 240V and a peak reflow temperature of 260C, this transistor offers reliability and durability like no other. Experience seamless operation and efficient power dissipation with the BSP220,115 - the ultimate choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and provides protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high electron mobility and low ON-resistance, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps to protect the transistor from reverse voltage spikes, enhancing its reliability in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Maximum Drain Current (Abs) (ID): 0.225 A

With a maximum drain current of 0.225 A, this transistor can handle moderate power loads effectively.

Maximum Power Dissipation (Abs): 1.5 W

Able to dissipate up to 1.5 W of power without overheating, ensuring reliable operation in various conditions.

Maximum Operating Temperature: 150 °C

Capable of operating at temperatures up to 150°C, making it suitable for high-temperature environments.

Maximum Drain-Source On Resistance: 20 ohm

Low ON-resistance helps in minimizing power losses and improves the efficiency of the transistor in switching applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology ensures high performance and reliability in electronic circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSP220,115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

240 V

Maximum Drain Current (Abs) (ID):

.225 A

Maximum Drain Current (ID):

.225 A

Maximum Drain-Source On Resistance:

20 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSP220,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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