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BSN20,215

NXP Semiconductors

BSN20,215 by NXP Semiconductors

BSN20,215 by NXP Semiconductors is a small signal FET with N-channel polarity. It features a single configuration with built-in diode for switching applications. Operating in enhancement mode, it has a max drain current of 0.173A and a max power dissipation of 0.3W, making it suitable for various electronic devices.

Median Price

$0.215

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Rochester

USA . 49 parts In-Stock

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$0.215

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$0.179

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$0.159

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$0.074

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Digiode

USA . 4,488 parts In-Stock

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$0.083

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$0.083

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Component Electronics Inc.

Canada . 2,713 parts In-Stock

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$0.770

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$0.770

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Chip Stock

USA . 138,000 parts In-Stock

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VNN

France . 29,147 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 14,054 parts In-Stock

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Greenchips

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Vyrian

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LIBRA Elektronik GmbH

Germany . 4,831 parts In-Stock

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J2 Sourcing AB

Sweden . 2,791 parts In-Stock

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Elcom Components

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Microfarads

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Connector Distribution Corp

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Right Parts Inc.

USA . 2,250 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Speed Components Ltd

Israel . 1,000 parts In-Stock

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Euro-Tech

UK . 934 parts In-Stock

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Anansix

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PC Components Company LLC

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Prism Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 49 parts In-Stock

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$0.074

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Semicontronic

India . 49 parts In-Stock

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$0.074

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$0.072

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$0.072

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Argo Parts USA

USA . 3,933 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.070

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$0.069

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$0.074

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Corphita

USA . 3,646 parts In-Stock

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Microchip USA

USA . 314 parts In-Stock

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$0.410

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Corohmni

South Africa . 199 parts In-Stock

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Aztec Data Supply Inc.

USA . 15 parts In-Stock

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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AZTECH Wire

Italy . 12,819 parts In-Stock

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ChipTracer

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Authorized Procurement Solutions

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Lixinc

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

Germany . 9,000 parts In-Stock

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UNI Independent Distributors

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Kepictronics

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Perfect Parts

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S.R.D Solutions

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Epart123

USA . 1,338 parts In-Stock

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Supply Digital

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Robosynatics

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Lucentia Tech

USA . 100 parts In-Stock

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$24.824

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$24.824

Continental Prestige Electronics

USA . 49 parts In-Stock

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Overview

Discover the power of innovation with the BSN20,215 by NXP Semiconductors. As a leader in small signal field effect transistors, NXP delivers quality and reliability in every product. Ideal for switching applications, this N-channel transistor offers unparalleled performance and efficiency. With a maximum drain-source on resistance of 20 ohms and a built-in diode, the BSN20,215 is a versatile solution for your electronic needs. Trust NXP Semiconductors to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the BSN20,215 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components, making this FET a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have faster switching speeds and higher efficiencies compared to P-channel FETs, making them suitable for applications that require high performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can provide additional protection against reverse voltage scenarios, making this FET versatile and easier to implement in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast and efficient operation, making it suitable for use in power management circuits and other switching systems.

Surface Mount: YES

Being surface mount compatible allows for easier integration onto PCBs, enabling more compact and streamlined designs for electronic devices or systems.

Maximum Drain Current (Abs) (ID): 0.1 A

With a maximum drain current of 0.1 A, this FET can handle moderate power levels, making it suitable for low to medium power applications.

Maximum Power Dissipation (Abs): 0.3 W

The maximum power dissipation of 0.3 W ensures that the FET can operate within safe temperature limits, contributing to its overall reliability and longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics such as low leakage current and high switching speeds, making this FET a dependable choice for various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high temperature environments, ensuring reliable performance under challenging conditions.

Maximum Drain-Source On Resistance: 20 ohm

A low drain-source on resistance of 20 ohms results in reduced power losses and improved efficiency, making this FET suitable for applications where low on-resistance is crucial.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSN20,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.173 A

Maximum Drain-Source On Resistance:

20 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSN20,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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