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BCX53-16,146

NXP Semiconductors

BCX53-16,146 by NXP Semiconductors

BCX53-16,146 by NXP is a PNP BJT transistor for switching applications. Features include 1W power dissipation, hFE of 100, and max operating temp of 150°C. Ideal for small outline packages in automotive electronics due to its high collector current and transition frequency of 145MHz.

Median Price

$0.088

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13

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1k+

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Rochester

USA . 42,000 parts In-Stock

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$0.053

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$0.050

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$0.045

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42,000

$0.053

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$0.045

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Elektronika Sales Private Limited

India . 16,000 parts In-Stock

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EBV Elektronik

Germany . 14,000 parts In-Stock

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Farnell

UK . 9,011 parts In-Stock

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$0.122

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$0.122

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Element14

Singapore . 9,011 parts In-Stock

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$0.241

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$0.207

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Future Electronics

Canada . 5,000 parts In-Stock

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$0.048

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Distributors (In-Stock)

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Digiode

USA . 3,766 parts In-Stock

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$0.048

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Nova Conductors

Japan . 500 parts In-Stock

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$0.112

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Chip Stock

USA . 112,000 parts In-Stock

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Vyrian

USA . 10,268 parts In-Stock

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NAC Semi

USA . 4,000 parts In-Stock

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VNN

France . 2,163 parts In-Stock

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Anansix

USA . 609 parts In-Stock

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Corphita

USA . 2,421 parts In-Stock

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$0.046

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Component Stockers USA

USA . 27,285 parts In-Stock

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$0.050

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$0.050

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$0.040

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$0.040

27,285

$0.050

$0.050

$0.040

$0.040

Semicontronic

India . 8,615 parts In-Stock

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$0.094

100+ parts

$0.092

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$0.091

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8,615

$0.094

$0.092

$0.091

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Argo Parts USA

USA . 400 parts In-Stock

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$0.107

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$0.104

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$0.107

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$0.104

AZTECH Wire

Italy . 10,268 parts In-Stock

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$0.320

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Aztec Data Supply Inc.

USA . 1,182 parts In-Stock

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$0.806

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$1.131

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$1.074

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$1.131

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$1.074

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Corohmni

South Africa . 236 parts In-Stock

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$1.290

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Infinite Electronics LLP (Excess)

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Eastek

USA . 27,000 parts In-Stock

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Continental Prestige Electronics

USA . 16,034 parts In-Stock

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$0.189

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UNI Independent Distributors

Spain . 8,002 parts In-Stock

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

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GreenTree Electronics

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Bastille Electronics

Australia . 300 parts In-Stock

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Supply Digital

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Overview

Experience superior performance and reliability with the BCX53-16,146 by NXP Semiconductors. As a leading manufacturer in the electronics industry, NXP Semiconductors delivers top-notch Small Signal Bipolar Junction Transistors (BJT) like this PNP transistor designed for switching applications. With a maximum power dissipation of 1W and a collector-emitter voltage of 80V, this transistor offers exceptional quality and efficiency. Trust NXP Semiconductors for innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration in circuits that require PNP transistors, expanding the versatility of this product.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easy to use in different setups.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in situations where fast switching is required.

Surface Mount: YES

The surface mount feature allows for easy and secure installation on circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

The rectangular shape provides a compact form factor, making it suitable for tight spaces and densely packed circuits.

Terminal Form: FLAT

The flat terminal form ensures a secure connection and easy soldering, enhancing overall reliability.

No. of Elements: 1

With a single element, this transistor is straightforward to use and simplifies circuit design.

No. of Terminals: 3

Having three terminals allows for easy connectivity and flexibility in circuit configurations.

Maximum Power Dissipation (Abs): 1 W

The 1W power dissipation rating ensures the transistor can handle high power loads without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact designs.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain of 100 ensures consistent and reliable amplification in various applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range of 150°C, this transistor can withstand harsh environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80V makes this transistor suitable for high voltage applications.

Transistor Element Material: SILICON

The silicon material of the transistor element ensures high performance and reliability in different conditions.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle moderate to high current loads effectively.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and ensures a reliable electrical connection.

Terminal Position: SINGLE

The single terminal position simplifies installation and circuit design, making it easy to integrate this transistor.

Moisture Sensitivity Level (MSL): 1

Featuring moisture sensitivity level 1, this transistor is suitable for a wide range of operating conditions.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies circuit layout and improves overall performance.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature of 260°C ensures safe and efficient soldering.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C enables reliable and secure soldering during assembly.

Reference Standard: AEC-Q101; IEC-60134

Compliant with industry standards AEC-Q101 and IEC-60134, ensuring quality and reliability in various applications.

Nominal Transition Frequency (fT): 145 MHz

With a nominal transition frequency of 145MHz, this transistor provides high-speed performance in switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX53-16,146 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Reference Standard:

AEC-Q101; IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX53-16,146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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