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BCW71-TAPE-13

NXP Semiconductors

BCW71-TAPE-13 by NXP Semiconductors

BCW71-TAPE-13 from NXP Semiconductors is a single NPN BJT designed for surface mount applications. It features a max VCEsat of 0.25V, hFE of 110, and operates up to 150 °C, making it ideal for high-frequency circuits and signal amplification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,657 parts In-Stock

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2,657

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Digiode

USA . 931 parts In-Stock

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931

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Vyrian

USA . 204 parts In-Stock

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204

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Distributors (Availability)

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One Stop Electronics

USA . 1,056 parts In-Stock

1+ parts

$43.050

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1,056

$43.050

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UNI Independent Distributors

Spain . 4,469 parts In-Stock

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4,469

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Corphita

USA . 3,042 parts In-Stock

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3,042

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Northwest PG Solutions

USA . 1,335 parts In-Stock

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1,335

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Native Components

USA . 943 parts In-Stock

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943

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Overview

Elevate your projects with the BCW71-TAPE-13 from NXP Semiconductors, a trusted leader in innovative electronic solutions. This high-quality NPN transistor excels in small signal applications, boasting exceptional efficiency and reliability. Its compact design allows for seamless integration into diverse circuits, ensuring optimal performance even at elevated temperatures. Choose NXP for unmatched durability and dependability—experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package is lightweight and offers excellent protection against environmental factors, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it is well-suited for amplifying and switching applications, providing good performance in high-speed electronic circuits.

Configuration: SINGLE

Being a single configuration makes it compact and easy to integrate into various circuit designs without requiring additional components.

Surface Mount: YES

The surface mount capability allows for efficient use of PCB space, simplifying assembly and improving reliability in modern electronic designs.

Maximum VCEsat: 0.25 V

A low maximum VCEsat value indicates efficient performance in switching applications, reducing power loss and improving overall circuit efficiency.

Package Shape: RECTANGULAR

The rectangular package shape is ideal for standardized placement on PCB layouts, enhancing design flexibility and manufacturing consistency.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and reliable connections, which is critical for maintaining signal integrity in applications.

No. of Terminals: 3

The three terminals provide simple connectivity for common transistor configurations, making it easier to use in various circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a compact design, essential for applications where space constraints are a concern.

Minimum DC Current Gain (hFE): 110

A minimum DC current gain of 110 indicates strong amplification capability, making this transistor effective for a wide range of amplification applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures enhances reliability in demanding environments, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 45 V

With a maximum VCE of 45 V, this transistor can handle substantial voltage levels, ensuring reliable operation in various electronic circuits.

Transistor Element Material: SILICON

Silicon is widely used in BJTs for its excellent electrical characteristics, providing reliability and longevity in diverse applications.

Maximum Collector Current (IC): 0.1 A

The ability to handle a maximum collector current of 0.1 A makes this transistor applicable for low-to-moderate current applications.

Terminal Position: DUAL

Dual terminal position supports versatile mounting options, allowing for increased design flexibility in circuit integration.

Nominal Transition Frequency (fT): 300 MHz

A nominal transition frequency of 300 MHz enables high-speed switching and amplification, which is crucial for modern communication systems.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW71-TAPE-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

BCW71-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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