Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Nexperia PMT280ENEAX is a N-CHANNEL FET with 100V DS breakdown voltage and 1.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.385 ohm max on resistance, and operates in enhancement mode. This small outline transistor has a peak reflow temp of 260°C and meets AEC-Q101 & IEC-60134 standards.
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$0.414
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Mouser Electronics
$1.160
$0.508
Arrow
$0.116
TTI
$0.130
$0.119
EBV Elektronik
Verical
$0.303
Rochester
$0.292
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Chip1Stop
$0.157
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Nova Conductors
IBS Electronics
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$0.152
Vyrian
Chip Stock
NAC Semi
$0.192
$0.177
Semicontronic
$0.090
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Ampacity Inc.
Argo Parts USA
Component Stockers USA
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Modulus Dynamics
$0.502
AZTECH Wire
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$1.560
RC Electronics
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Futuretech Components
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GreenTree Electronics
Provides durability and protection for the transistor, ensuring reliable performance in various operating conditions.
N-Channel FETs typically have better performance characteristics compared to P-Channel FETs, making this transistor a good choice for switching applications.
The built-in diode simplifies circuit design and can provide protection against voltage spikes, enhancing the transistor's functionality.
Designed specifically for switching applications, ensuring fast and efficient operation.
Allows for easy and convenient PCB assembly, saving time and effort during production.
With a high breakdown voltage, this transistor can handle higher voltages, making it suitable for a wide range of applications.
Capable of handling relatively high drain currents, making it suitable for medium-power applications.
Low on-resistance leads to reduced power loss and improved efficiency in switching applications.
Small Signal Field Effect Transistors (FET) PMT280ENEAX attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Nexperia
Additional Features:
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
PMT280ENEAX Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev EOL 03/Jul/2019
PCN Packaging - All Dev Label Chgs 2/Aug/2020 Mult Dev Carrier Tape Chg 10/Aug/2019
Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.
CEO
Xuezheng Zhang (Wing)
CFO
Stefan Tilger
COO
Achim Kempe
Hamburg
Fabrication
Fab Initiation
1981
Germany
Wafer Capacity
36,000
Manchester (8-inch line)
2017
Australia
Hazelgrove
12,000
Manchester (6-inch line)
1998
22,000
Shanghai Fab
2022
China
Shanghai
Nexperia Newport
UK
Newport
34,000
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Hi-tron Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LL4148-GS08
Telefunken Microelectronics
RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;
LM555CM
Texas Instruments
LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.
LM358N
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WT
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
261
Deltrol Controls
Other Relays;
1N4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
SS14
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
Nexperia
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Semitron
RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;
M39029/58-360
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
Positronic Industries
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Body or Shell Style: RECEPTACLE;
MMBT2222ALT1G
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
CRCW06030000Z0EAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.
BSS123,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
Rectron
FDC5614P_NL
Fairchild Semiconductor
FDC5614P_NL by Fairchild Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3A Drain Current, 0.105 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package style, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
FDC5612
FDC5612 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 4.3A and an On Resistance of 0.055 ohm. With a small outline package style and operating temperature up to 150°C, it is suitable for various electronic devices requiring high power dissipation.
NDS355AN-F169
Small Signal Field-Effect Transistors;
BSS138WT106
ROHM
ROHM BSS138WT106 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.31A ID, and 3 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. With Gull Wing terminals and small outline package, it can handle up to 0.3W power dissipation.
ZVN2110A
Diodes Incorporated
ZVN2110A by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.32A ID, and 4 ohm RDS(on). Ideal for small signal applications in electronics due to its SILICON element material, ENHANCEMENT MODE operation, and low feedback capacitance of 8pF.
BSS138PS,115
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
BSS84DW-7-F
Diodes Inc. BSS84DW-7-F is a P-CHANNEL FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications in small outline packages, it operates in enhancement mode at up to 150°C with built-in diode elements.
2N7002H6327XTSA2
Infineon Technologies
2N7002H6327XTSA2 by Infineon Technologies is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.3A ID and 3ohm RDS(on). Operating in ENHANCEMENT MODE, it features a built-in DIODE and operates up to 150°C.
BSS83PL6327HTSA1
Infineon's BSS83PL6327HTSA1 is a P-CHANNEL FET with 60V DS breakdown voltage, 0.33A ID, and 2 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include single configuration with built-in diode and GULL WING terminals.
BSS138WH6433XTMA1
Infineon's BSS138WH6433XTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in various electronic devices.
2N7002KQ-7
2N7002KQ-7 by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.38A drain current, and 2 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.54W. The transistor's small outline package and matte tin finish make it suitable for surface mount designs.
BSS123
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
2N7002T
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
LND150N3-GP003
Microchip Technology
LND150N3-GP003 by Microchip Technology is a small signal N-CHANNEL FET with a min DS breakdown voltage of 500V. It is commonly used for switching applications and operates in depletion mode. With a max operating temperature of 150°C, it has a max drain current of 0.03A and a max drain-source on resistance of 1000Ω.
FQT1N60CTF-WS
FQT1N60CTF-WS by Onsemi is a N-channel FET with 600V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminal form, and 2.1W max power dissipation. Suitable for enhancement mode operation at up to 150°C, it has a drain-source on resistance of 11.5 ohm and max drain current of 0.2A.
FDY300NZ
FDY300NZ by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.6A Drain Current, and 0.7 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package suitable for surface mount technology.
2N7002-T
NXP Semiconductors
2N7002-T by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS Breakdown Voltage of 60V and Max Drain Current of 0.3A. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max operating temperature of 150°C.
BSS138NH6327
BSS138NH6327 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE, with 0.23A Drain Current and 3.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.36W at temperatures ranging from -55 to 150 °C.
BS170
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-30 Code: O-PBCY-T3; Package Body Material: PLASTIC/EPOXY;
2N7002K
2N7002K by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 2 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
BAS21TH
MJD45H11
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
NXB0104BQ
BUS TRANSCEIVER; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au);
PNS40010ER
MJD32C
Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 260;
74HC4053PW
SPDT; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
GAN041-650WSB
Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn);
NCR320U
LED DISPLAY DRIVER; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BUK7V4R2-40H
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
NCR420Z
LED DISPLAY DRIVER; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
BUK6D22-30E
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1;
MJD31CA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
NCR321PAS
LED DISPLAY DRIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 6; Package Code: HVSON; Package Shape: SQUARE;
BUK9K13-60RA
PUSB3BB2DF
NXS0104PW-Q100
BUS TRANSCEIVER; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag); Moisture Sensitivity Level (MSL): 1;
LSF0102DC
Level Translators; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag); JESD-609 Code: e4;
BCP53H
Small Signal Bipolar Transistors; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
PNE20030EP
74AUP1G17GX4
BUFFER; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
PMT200EPEAX
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 2.4 A; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 70 V;
PMT200EN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 100 V; Package Body Material: PLASTIC/EPOXY;
PMT200EPEA
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
PMT21EN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Finish: TIN; Additional Features: LOGIC LEVEL COMPATIBLE;
PMT21EN,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.33 W; Case Connection: DRAIN; Terminal Position: DUAL;
PMT280ENEA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
PMT29EN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .235 ohm; No. of Terminals: 4; No. of Elements: 1;
PMT200EPE
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; Case Connection: DRAIN;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): 7.4 A; Maximum Drain-Source On Resistance: .026 ohm;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PDSO-G4; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 100 V;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE;
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