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PMT21EN,135

NXP Semiconductors

PMT21EN,135 by NXP Semiconductors

PMT21EN,135 from NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 7.4 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

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Digiode

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Anansix

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AZTECH Wire

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One Stop Electronics

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UNI Independent Distributors

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QUARKTWIN TECHNOLOGY LTD

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Supply Digital

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Microchip USA

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Overview

Unlock unparalleled efficiency with the PMT21EN,135 from NXP Semiconductors—a standout in small signal FET technology. Renowned for their commitment to quality, NXP delivers a robust solution perfect for switching applications, ensuring reliability and performance in demanding environments. With its compact design and built-in diode, this transistor enhances circuit versatility while maximizing power management. Elevate your projects with NXP's innovation and experience the transformative benefits today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy construction offers reliable protection and stability, making the FET suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel configuration provides enhanced electron mobility, which typically results in better performance and efficient switching capabilities.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies design while ensuring protection against back EMF, which enhances circuit reliability.

Transistor Application: SWITCHING

Optimized for switching applications, this FET is ideal for efficient control of power in circuits, improving overall system performance.

Surface Mount: YES

Surface mount design enables compact circuit layouts and automated assembly processes, leading to reduced manufacturing costs.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V ensures suitability for medium voltage applications, preventing early failure in demanding environments.

Package Shape: RECTANGULAR

The rectangular package allows for space-efficient layout and easy integration into designs, optimizing PCB real estate.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections, improving reliability and robustness in various thermal and mechanical conditions.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for low-power idle states, which is beneficial for energy-saving designs.

Maximum Drain Current (Abs): 7.4 A

With a maximum drain current of 7.4A, this FET can handle substantial loads, making it suitable for power applications.

No. of Terminals: 4

Having 4 terminals simplifies the circuitry while providing efficient signal control and management.

Maximum Power Dissipation (Abs): 8.33 W

The ability to dissipate up to 8.33W of power effectively allows this FET to manage heat in high-performance applications.

Package Style (Meter): SMALL OUTLINE

Compact small outline design is ideal for space-constrained applications, increasing design flexibility and performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures fast switching speeds and lower on-resistance, which translates to improved energy efficiency.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150 °C enhances reliability in high-temperature environments, ensuring long-term performance.

Transistor Element Material: SILICON

Silicon material provides a good balance of performance, temperature stability, and cost-effectiveness for general use.

Terminal Finish: TIN

Tin terminal finishing ensures good solderability and good conductivity while also resisting corrosion, enhancing reliability.

Maximum Drain-Source On Resistance: 0.021 ohm

Low on-resistance minimizes power loss during operation, leading to more efficient energy usage in electronic circuits.

Terminal Position: DUAL

Dual terminal positioning facilitates easy routing in designs, offering flexibility in PCB layout.

Case Connection: DRAIN

DRAIN case connection ensures efficient heat dissipation and improves overall thermal management in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

30 seconds at peak reflow temperature allows for effective soldering without damaging sensitive components.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C allows compatibility with various soldering processes and enhances manufacturing efficiency.

Reference Standard: IEC-60134

Compliance with IEC-60134 ensures that the product meets international standards for safety and performance, boosting reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMT21EN,135 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

7.4 A

Maximum Drain Current (ID):

7.4 A

Maximum Drain-Source On Resistance:

.021 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMT21EN,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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