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IRF510G

New Jersey Semiconductor Products

IRF510G by New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

J & M Industries LLC

USA . 102 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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102

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRF510G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from New Jersey Semiconductor Products

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

5.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Polarity or Channel Type:

Transistor Element Material:

SILICON

Trade Compliance

IRF510G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

New Jersey Semiconductor Products

New Jersey Semiconductor has been designing, manufacturing, and producing highly reliable electronic devices since 1957. Our mission is to supply you with high quality, cost effective discrete devices for commercial, industrial, and military applications. New Jersey Semiconductor's quality management system has been verified to conform with ISO 9001:2015 standards.

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