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IRF510F

New Jersey Semiconductor Products

IRF510F by New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (ID): 5.6 A; No. of Elements: 1; Minimum DS Breakdown Voltage: 100 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 35,991 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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35,991

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRF510F attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from New Jersey Semiconductor Products

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

5.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Polarity or Channel Type:

Transistor Element Material:

SILICON

Trade Compliance

IRF510F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

New Jersey Semiconductor Products

New Jersey Semiconductor has been designing, manufacturing, and producing highly reliable electronic devices since 1957. Our mission is to supply you with high quality, cost effective discrete devices for commercial, industrial, and military applications. New Jersey Semiconductor's quality management system has been verified to conform with ISO 9001:2015 standards.

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