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NP36N055HLE

Nec Electronics America

NP36N055HLE by Nec Electronics America

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JESD-30 Code: R-PSIP-T3; Operating Mode: ENHANCEMENT MODE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kepictronics

USA . 15,000 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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15,000

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Technical Specifications

Power Field Effect Transistors (FET) NP36N055HLE attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics America

Specs

Avalanche Energy Rating (EAS):

108 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (ID):

36 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

144 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP36N055HLE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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