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MMDF4N01ZR1

Motorola

MMDF4N01ZR1 by Motorola

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): 4.5 A; No. of Terminals: 8;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Field Effect Transistors (FET) MMDF4N01ZR1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Motorola

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

45 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

460 pF

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.39 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMDF4N01ZR1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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