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MGF2445-11

Mitsubishi Electric

MGF2445-11 by Mitsubishi Electric

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Terminal Position: DUAL; Minimum Power Gain (Gp): 4.5 dB;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Power Field Effect Transistors (FET) MGF2445-11 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Mitsubishi Electric

Specs

Case Connection:

SOURCE

Configuration:

Maximum Drain Current (ID):

1.4 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Minimum Power Gain (Gp):

4.5 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

MGF2445-11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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