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CM600DY-13T

Mitsubishi Electric

CM600DY-13T by Mitsubishi Electric

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4165 W; Maximum Collector Current (IC): 600 A; Maximum Gate-Emitter Threshold Voltage: 6.6 V;

Median Price

$209.570

Lifecycle Status

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1

In-Stock Inventory

< 1k

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Ozdisan Elektronik

Türkiye . 193 parts In-Stock

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$209.570

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193

$209.570

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Perfect Parts

USA . 2,633 parts In-Stock

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10k+ parts

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2,633

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Overview

Mitsubishi Electric Industrial Insulated Gate Bipolar Transistor (IGBT) Modules incorporate a three-phase converter, inverter, and brake circuit (CIB) into a single package. These IGBTs offer a chip structure that evolved from a flat planar structure to a trench gate structure. The CSTBT™ technology enables low loss and a smaller size for industrial equipment. The industrial IGBT module lineup from Mitsubishi Electric features 5th-generation composite products with a thin profile (NX type) in addition to the former external shape (standard type), as well as 6th-generation S series, and the 7th-generation T/T1 series, with low power loss and a smaller size.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM600DY-13T attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Fall Time (tf):

400 ns

Maximum Gate-Emitter Threshold Voltage:

6.6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Maximum Rise Time (tr):

200 ns

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

900 ns

Maximum Turn On Time (ton):

600 ns

Maximum VCEsat:

1.75 V

Trade Compliance

CM600DY-13T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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