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MSC1090M

Microsemi

MSC1090M by Microsemi

MSC1090M by Microsemi is a NPN RF BJT transistor with 65V VCEO, 5.52A IC, and 1025MHz fT. It is used as an amplifier in L Band applications due to its 220W power dissipation, flat terminal form, and flange mount package style.

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Vyrian

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Nova Conductors

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AZTECH Wire

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Overview

Unleash the power of connectivity with the MSC1090M RF Power Bipolar Junction Transistor by Microsemi. Designed with precision and quality in mind, this NPN transistor offers unmatched performance in amplifier applications within the L Band frequency range. With a maximum power dissipation of 220W and a nominal transition frequency of 1025 MHz, this transistor delivers reliability and efficiency like no other. Elevate your projects with the trusted expertise of Microsemi and experience seamless connectivity like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight package for the transistor, making it easy to handle and integrate into various electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for various amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying electrical signals.

Surface Mount: YES

Surface-mount technology allows for easy installation on circuit boards, reducing assembly time and improving overall reliability.

Maximum Power Dissipation (Abs): 220 W

High power dissipation capability ensures the transistor can handle large amounts of power without overheating or malfunctioning.

Maximum Collector-Emitter Voltage: 65 V

The high collector-emitter voltage rating provides a wide operating range for the transistor, making it versatile in different applications.

Maximum Collector Current (IC): 5.52 A

High collector current rating allows the transistor to handle large current loads, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 1025 MHz

High transition frequency indicates fast switching speeds, making the transistor suitable for high-frequency applications such as RF amplifiers.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MSC1090M attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Microsemi

Specs

Additional Features:

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

O-PDFM-F2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSC1090M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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