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JANTXV1N5635ATR

Microsemi

JANTXV1N5635ATR by Microsemi

JANTXV1N5635ATR by Microsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 1500W power dissipation, 10.2V peak reverse voltage, and -65 to 175°C operating range. Ideal for transient suppression in military applications due to MIL-19500 standard compliance and UNIDIRECTIONAL polarity.

Median Price

$52.140

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$52.140

100+ parts

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650

$52.140

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Vyrian

USA . 14,924 parts In-Stock

1+ parts

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14,924

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,518 parts In-Stock

1+ parts

$1.010

100+ parts

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1,518

$1.010

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AZTECH Wire

Italy . 823 parts In-Stock

1+ parts

$7.614

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823

$7.614

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Netroflash

USA . 100 parts In-Stock

1+ parts

$52.140

100+ parts

$51.097

1k+ parts

$49.533

10k+ parts

$48.490

100

$52.140

$51.097

$49.533

$48.490

Component Stockers USA

USA . 93 parts In-Stock

1+ parts

$927.820

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93

$927.820

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Overview

Discover the reliable protection and superior quality of the JANTXV1N5635ATR by Microsemi. As a leading manufacturer in the industry, Microsemi's Transient Suppression Devices offer unparalleled performance for a wide range of applications. With its robust design and exceptional durability, this product ensures peace of mind against power surges and voltage spikes. Trust in Microsemi to deliver the utmost value and benefits, providing customers with the advantage they need to safeguard their electronic devices. Choose Microsemi for unmatched quality and protection you can depend on.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide durability and thermal conductivity, ensuring the device can withstand high power dissipation and operate in a wide temperature range.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability makes this device suitable for handling transient voltage surges without getting damaged.

Minimum Breakdown Voltage: 11.4 V

Low breakdown voltage ensures efficient suppression of voltage spikes below this threshold, protecting connected components.

Maximum Repetitive Peak Reverse Voltage: 10.2 V

The maximum repetitive peak reverse voltage sets the upper limit that this device can handle repeatedly, making it suitable for applications with voltage levels below this value.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for voltage surge suppression, providing effective protection against transient events.

Technical Specifications

Transient Suppression Devices JANTXV1N5635ATR attributes and parameters. Explore more Transient Suppression Devices devices from Microsemi

Specs

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-202AA

JESD-30 Code:

O-MALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500

Maximum Repetitive Peak Reverse Voltage:

10.2 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JANTXV1N5635ATR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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