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JANTXV1N6103AUS

Microchip Technology

JANTXV1N6103AUS by Microchip Technology

JANTXV1N6103AUS by Microchip is a Trans Voltage Suppressor Diode with 500W power dissipation, 50uA reverse current, and 5.7V reverse test voltage. It is used for transient suppression in applications requiring bidirectional polarity protection at temperatures ranging from -55 to 175°C.

Median Price

$21.380

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

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$21.380

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Verical

USA . 1 parts In-Stock

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Distributors (In-Stock)

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Freelance Electronics

USA . 41 parts In-Stock

1+ parts

$18.346

100+ parts

$19.264

1k+ parts

$18.163

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41

$18.346

$19.264

$18.163

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Nova Conductors

Japan . 89 parts In-Stock

1+ parts

$27.950

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Vyrian

USA . 298 parts In-Stock

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NexGen Digital

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.125

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$0.114

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$0.102

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$0.125

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AZTECH Wire

Italy . 298 parts In-Stock

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$10.701

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Fulton Briggs Corp.

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Netroflash

USA . 1,000 parts In-Stock

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$27.391

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$26.553

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$25.994

1,000

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$27.391

$26.553

$25.994

Overview

Looking for reliable transient suppression devices? Look no further than the JANTXV1N6103AUS by Microchip Technology. With a reputation for top-quality products, Microchip Technology delivers exceptional performance and durability. Ideal for various applications, this diode offers maximum protection against voltage spikes. Experience peace of mind knowing your electronics are safeguarded with the JANTXV1N6103AUS. Trust Microchip Technology for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides high durability and resilience, making this product suitable for rugged environments.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards and space-saving designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High power dissipation capacity ensures reliable protection against transient voltage spikes.

Maximum Reverse Current: 50 uA

Low reverse current ensures minimal power loss and efficient operation.

Package Shape: ROUND

Round shape allows for uniform heat dissipation and easy placement in circuit layouts.

Reverse Test Voltage: 5.7 V

Suitable reverse test voltage rating for effective transient suppression.

No. of Terminals: 2

Simple 2-terminal design for easy connection and installation.

Package Style (Meter): LONG FORM

Long form factor provides adequate space for circuit protection elements.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead finish ensures good electrical conductivity and solderability for secure connections.

Terminal Position: END

End terminal position facilitates easy connection and integration into circuit layouts.

Maximum Power Dissipation: 2 W

Sufficient power dissipation capacity for effective transient suppression.

Minimum Breakdown Voltage: 7.13 V

Adequate breakdown voltage rating for reliable protection against over-voltage conditions.

Reference Standard: MIL-19500

Compliance with MIL-19500 standard ensures high quality and reliability in performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type optimized for transient voltage suppression applications.

Technology: AVALANCHE

Avalanche technology offers high energy handling capability for robust transient voltage suppression.

Terminal Form: WRAP AROUND

Wrap around terminal form ensures secure connections and resistance to mechanical stresses.

Maximum Repetitive Peak Reverse Voltage: 5.7 V

Suitable voltage rating for repeated transient voltage suppression.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows for protection against voltage spikes in both directions.

Maximum Clamping Voltage: 11.2 V

Effective clamping voltage rating for limiting peak voltage levels during transient events.

Diode Element Material: SILICON

Silicon diode element material provides reliable performance and durability.

Technical Specifications

Transient Suppression Devices JANTXV1N6103AUS attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

7.13 V

Maximum Clamping Voltage:

11.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

2 W

Qualification:

Qualified

Reference Standard:

MIL-19500

Maximum Repetitive Peak Reverse Voltage:

5.7 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

5.7 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

END

Trade Compliance

JANTXV1N6103AUS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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