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MT62F1G32D4DR-031WT:B

Micron Technology

MT62F1G32D4DR-031WT:B by Micron Technology

Micron Technology's MT62F1G32D4DR-031WT:B is a 1GX32 LPDDR5 DRAM with 3200 MHz clock frequency, 1.05V supply voltage, and -25 to 85°C operating range. Ideal for high-performance applications requiring fast synchronous memory access in compact devices.

Median Price

$26.850

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 717 parts In-Stock

1+ parts

$26.850

100+ parts

$22.876

1k+ parts

$22.114

10k+ parts

-

717

$26.850

$22.876

$22.114

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Mouser Electronics

USA . 296 parts In-Stock

1+ parts

$26.850

100+ parts

$22.670

1k+ parts

$22.080

10k+ parts

-

296

$26.850

$22.670

$22.080

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,253 parts In-Stock

1+ parts

$25.821

100+ parts

-

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-

10k+ parts

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1,253

$25.821

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-

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Vyrian

USA . 1,779 parts In-Stock

1+ parts

$27.180

100+ parts

-

1k+ parts

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1,779

$27.180

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Chip Stock

USA . 5,140 parts In-Stock

1+ parts

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5,140

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 622 parts In-Stock

1+ parts

$23.150

100+ parts

-

1k+ parts

-

10k+ parts

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622

$23.150

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-

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Corphita

USA . 382 parts In-Stock

1+ parts

$24.462

100+ parts

-

1k+ parts

-

10k+ parts

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382

$24.462

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Component Stockers USA

USA . 2,085 parts In-Stock

1+ parts

$26.000

100+ parts

$20.520

1k+ parts

$19.290

10k+ parts

-

2,085

$26.000

$20.520

$19.290

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Continental Prestige Electronics

USA . 2,617 parts In-Stock

1+ parts

-

100+ parts

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2,617

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Argo Parts USA

USA . 434 parts In-Stock

1+ parts

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434

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Elevate your device with the MT62F1G32D4DR-031WT:B by Micron Technology, a cutting-edge LPDDR5 DRAM that guarantees top-notch quality and reliability. Perfect for applications requiring high-speed data processing, this synchronous DRAM boasts a nominal supply voltage of 1.05V and a maximum clock frequency of 3200 MHz. With Micron Technology's reputation for excellence in memory solutions, you can trust that this product delivers unparalleled performance and efficiency. Upgrade your technology today and experience the exceptional value and benefits that the MT62F1G32D4DR-031WT:B has to offer.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easier and more efficient mounting on circuit boards, saving time and resources during production.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred in sync with a clock signal, resulting in faster and more reliable performance.

Nominal Supply Voltage / Vsup (V): 1.05

Having a low nominal supply voltage of 1.05V helps in reducing power consumption and heat generation, making it more energy efficient.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliability and stability under various environmental conditions.

Organization: 1GX32

With an organization of 1GX32, this memory module can handle large amounts of data efficiently, making it suitable for high-performance applications.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25°C ensures that the memory module can function even in cold environments without any issues.

Terminal Position: BOTTOM

Having terminals at the bottom simplifies the installation process and allows for easier connectivity with other components in the system.

Maximum Clock Frequency (fCLK): 3200 MHz

With a maximum clock frequency of 3200 MHz, this memory module can process data at high speeds, enabling smooth and efficient performance.

Technology: CMOS

CMOS technology provides low power consumption, high noise immunity, and faster switching speeds, enhancing the overall efficiency of the memory module.

Terminal Form: BALL

The ball terminal form simplifies the installation process and ensures a secure connection, reducing the risk of disconnection or damage during use.

No. of Words: 1073741824 words

With a large number of words, this memory module can store and process extensive amounts of data, making it suitable for tasks that require high memory capacity.

Memory Width: 32

Having a wide memory width of 32 bits allows for faster data transfer and processing, improving the overall performance of the memory module.

No. of Words Code: 1G

The use of 1G word codes simplifies data management and organization, making it easier to handle and access specific sets of data within the memory module.

Memory Density: 34359738368 bit

With a high memory density of 34359738368 bits, this memory module can store a large amount of data in a compact form factor, ideal for space-constrained applications.

Memory IC Type: LPDDR5 DRAM

LPDDR5 DRAM is a high-performance memory technology that offers low power consumption, fast data transfer rates, and improved reliability, making it a top choice for demanding applications.

Technical Specifications

DRAM MT62F1G32D4DR-031WT:B attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

3200 MHz

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

1GX32

Nominal Supply Voltage / Vsup (V):

1.05

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Position:

BOTTOM

Trade Compliance

MT62F1G32D4DR-031WT:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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