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VRF150

Microchip Technology

VRF150 by Microchip Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Terminal Position: RADIAL;

Median Price

$68.480

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 216 parts In-Stock

1+ parts

$68.480

100+ parts

$57.940

1k+ parts

-

10k+ parts

-

216

$68.480

$57.940

-

-

DigiKey

USA . 20 parts In-Stock

1+ parts

$68.480

100+ parts

$47.025

1k+ parts

-

10k+ parts

-

20

$68.480

$47.025

-

-

Chip1Stop

Japan . 264 parts In-Stock

1+ parts

$85.600

100+ parts

$69.500

1k+ parts

$69.000

10k+ parts

-

264

$85.600

$69.500

$69.000

-

Verical

USA . 114 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

114

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Legend Electronics Inc.

USA . 11 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 121 parts In-Stock

1+ parts

$58.210

100+ parts

-

1k+ parts

-

10k+ parts

-

121

$58.210

-

-

-

Microchip USA

USA . 2,219 parts In-Stock

1+ parts

$157.504

100+ parts

-

1k+ parts

-

10k+ parts

-

2,219

$157.504

-

-

-

West Coast Incorporated

USA . 1,085 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,085

-

-

-

-

Perfect Parts

USA . 28 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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28

-

-

-

-

Technical Specifications

RF Power Field Effect Transistors (FET) VRF150 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Microchip Technology

Specs

Configuration:

Minimum DS Breakdown Voltage:

170 V

Maximum Drain Current (ID):

16 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

VRF150 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.95

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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