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JANTXV2N2907AUB

Microchip Technology

JANTXV2N2907AUB by Microchip Technology

JANTXV2N2907AUB by Microchip Technology is a PNP small signal BJT transistor with a max collector-emitter voltage of 60V and max collector current of 0.6A. It is commonly used for switching applications due to its fast turn on/off time (45ns/300ns) and high DC current gain (hFE=100).

Median Price

$7.620

Lifecycle Status

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31

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1k+

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Arrow

USA . 1 parts In-Stock

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$6.825

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TTI

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Mouser Electronics

USA . 4,364 parts In-Stock

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Microchip Technology

USA . 538 parts In-Stock

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DigiKey

USA . 31 parts In-Stock

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Chip1Stop

Japan . 1 parts In-Stock

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Master Electronics

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Verical

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Future Electronics

Canada . 5 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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NAC Semi

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Component Electronics Inc.

Canada . 12 parts In-Stock

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$8.650

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$7.500

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Freelance Electronics

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American Microsemiconductor Inc.

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Vyrian

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Chip Stock

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Semi Source

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Bristol Electronics

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Electronics Depot

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Electro Sonic

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EPE Components Inc.

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IBS Electronics

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Sunrise Surplus Inc.

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Netsource Technology, Inc.

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Prism Electronics

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Electro Mavin

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Corel Iberica Componentes, S.L.

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NexGen Digital

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Resion

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Corohmni

South Africa . 179 parts In-Stock

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$0.474

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$1.515

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$1.379

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Aztec Data Supply Inc.

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Semicontronic

India . 103 parts In-Stock

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$5.626

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Component Stockers USA

USA . 3,508 parts In-Stock

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$7.340

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$6.820

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Aranea Global

USA . 1,000 parts In-Stock

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$7.806

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$7.493

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QUARKTWIN TECHNOLOGY LTD

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RGB Technical Solutions

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Microchip USA

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Argo Parts USA

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Metaverse IC Inc.

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Authorized Procurement Solutions

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GreenTree Electronics

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Robosynatics

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Lucentia Tech

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Perfect Parts

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Assy Fe

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Computer Components Inc. - USA

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Overview

Discover the JANTXV2N2907AUB by Microchip Technology, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed to enhance your switching applications. With its PNP polarity and single configuration, this transistor offers unparalleled performance and reliability. Its surface mount capability and small outline package shape make it easy to integrate into any project. Boasting a maximum power dissipation of 0.4 W and a maximum collector-emitter voltage of 60V, this transistor ensures efficient and safe operation. Whether you're working on industrial electronics or consumer devices, trust the JANTXV2N2907AUB to provide unmatched value and advantages for all your switching needs.

Feature Benefit Bullets

Polarity/Channel Type:

PNP - The PNP polarity enables this transistor to effectively switch current flow, making it suitable for various applications.

Configuration:

SINGLE - The single configuration simplifies circuit designs and facilitates easy integration into electronic systems.

Transistor Application:

SWITCHING - With its switching capability, this transistor excels in rapidly turning circuits on and off, enhancing overall system performance.

Surface Mount:

YES - The surface mount feature allows for a more compact and efficient circuit board layout, saving valuable space in electronic devices.

Package Shape:

RECTANGULAR - The rectangular package shape ensures easy mounting and facilitates automated assembly processes, making it convenient for mass production.

Terminal Form:

NO LEAD - The no-lead terminal form eliminates the need for soldering, simplifying the assembly process and reducing the risk of heat damage to the transistor.

No. of Elements:

1 - Being a single-element transistor, it offers a straightforward implementation in circuit designs, reducing complexity and enhancing reliability.

No. of Terminals:

3 - The three terminals provide necessary connections for the transistor's operation, enabling easy integration into various circuit configurations.

Maximum Power Dissipation (Abs):

0.4 W - With a high maximum power dissipation, this transistor can handle significant power levels, ensuring it can withstand demanding operating conditions.

Package Style (Meter):

SMALL OUTLINE - The small outline package style enables this transistor to be used in space-restricted applications while still providing excellent performance.

Minimum DC Current Gain (hFE):

100 - The minimum DC current gain ensures stable and predictable amplification, allowing for precisely controlled circuit operation.

Maximum Operating Temperature:

200°C - The high maximum operating temperature allows this transistor to withstand elevated temperatures without compromising its functionality, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage:

60 V - The high maximum collector-emitter voltage rating ensures the transistor can handle high voltage levels, enhancing its versatility in various applications.

Transistor Element Material:

SILICON - The use of silicon as the transistor element material ensures reliable performance and compatibility with commonly used electronic components.

Maximum Turn On Time (ton):

45 ns - The short turn-on time enables quick response and efficient switching operations, suitable for applications requiring fast switching speeds.

Maximum Collector Current (IC):

0.6 A - With a high maximum collector current, this transistor can handle higher current levels, making it suitable for applications that require significant power handling capabilities.

Maximum Turn Off Time (toff):

300 ns - The maximum turn-off time ensures efficient and reliable switching, preventing undesired overlap between on and off states.

Terminal Finish:

TIN LEAD - The tin-lead terminal finish provides excellent solderability, making it easy to connect the transistor reliably within an electronic circuit.

Terminal Position:

DUAL - The dual terminal position allows for flexible placement and connection options in circuit designs, optimizing space utilization.

Reference Standard:

MIL-19500/291M - This product adheres to the MIL-19500/291M reference standard, guaranteeing its reliability and performance according to established industry guidelines.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) JANTXV2N2907AUB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-XDSO-N3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Qualified

Reference Standard:

MIL-19500/291M

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

JANTXV2N2907AUB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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