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JANTX2N3867U4

Microchip Technology

JANTX2N3867U4 by Microchip Technology

JANTX2N3867U4 by Microchip Tech is a PNP transistor with max power dissipation of 35W, hFE of 40, and IC of 3A. Ideal for applications requiring high current amplification in a single configuration. Suitable for surface mount setups with an operating temp up to 200°C.

Median Price

$154.284

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$154.284

100+ parts

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300

$154.284

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Vyrian

USA . 692 parts In-Stock

1+ parts

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692

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 872 parts In-Stock

1+ parts

$6.752

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872

$6.752

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Ampacity Inc.

Singapore . 983 parts In-Stock

1+ parts

$64.050

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983

$64.050

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QUARKTWIN TECHNOLOGY LTD

USA . 23,851 parts In-Stock

1+ parts

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23,851

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Microchip USA

USA . 10,397 parts In-Stock

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10,397

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RGB Technical Solutions

Ukraine . 1,400 parts In-Stock

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1,400

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Overview

Unleash the power of innovation with the JANTX2N3867U4 transistor by Microchip Technology. Crafted with precision and expertise, this PNP transistor offers unparalleled performance and reliability for a wide range of applications. Whether you're designing cutting-edge electronics or upgrading existing systems, this transistor's single configuration and surface mount capability make it a versatile choice. Experience enhanced efficiency and functionality with a maximum power dissipation of 35 W and a minimum DC current gain of 40. Trust in Microchip Technology to deliver quality components that elevate your projects to new heights.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in low-power applications and can be easily integrated into circuits.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple circuit designs.

Surface Mount: YES

Surface mount transistors are compact and can be directly mounted on the surface of printed circuit boards, saving space.

Maximum Power Dissipation (Abs): 35 W

With a maximum power dissipation of 35 W, this transistor can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable and consistent amplification in different circuit applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high temperature environments without malfunctioning.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows for handling higher current loads, making it suitable for various electronic applications.

Technical Specifications

Other Function Transistors JANTX2N3867U4 attributes and parameters. Explore more Other Function Transistors devices from Microchip Technology

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

40

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

JANTX2N3867U4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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