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JANTX2N6438

Onsemi

JANTX2N6438 by Onsemi

JANTX2N6438 by Onsemi is a PNP transistor with max power dissipation of 200W, hFE of 30, and IC of 25A. Ideal for applications requiring high current amplification in a single configuration. Operates up to 200 °C making it suitable for demanding environments.

Median Price

$784.100

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

JANTX2N6438 by Onsemi
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 61 parts In-Stock

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$784.100

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61

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$258.620

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1

$258.620

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Digiode

USA . 467 parts In-Stock

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$744.895

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467

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Vyrian

USA . 2,681 parts In-Stock

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2,681

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First Choice Components Inc.

USA . 2 parts In-Stock

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Advanced Electronics

New Zealand . 33 parts In-Stock

1+ parts

$2.351

100+ parts

$2.139

1k+ parts

$1.928

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33

$2.351

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$1.928

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Corohmni

South Africa . 216 parts In-Stock

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$258.620

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216

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Corphita

USA . 2,320 parts In-Stock

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$705.690

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2,320

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 5,890 parts In-Stock

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5,890

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TANS Electronics

Latvia . 5,283 parts In-Stock

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RGB Technical Solutions

Ukraine . 4,425 parts In-Stock

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SupplyDigital Components

Austria . 1,872 parts In-Stock

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Kulean Microsystems

USA . 1,306 parts In-Stock

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UHIMA Technologies

Türkiye . 511 parts In-Stock

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511

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Overview

Discover the unparalleled quality and performance of the JANTX2N6438 by Onsemi, a top-tier manufacturer known for its cutting-edge technology and reliability. This PNP transistor offers a wide range of applications in various industries, providing customers with unmatched value and benefits. With a maximum power dissipation of 200W and a high DC current gain, this transistor ensures optimal performance and efficiency. Trust Onsemi to deliver superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power applications, making this product suitable for applications where high power dissipation is required.

Configuration: SINGLE

Single configuration transistors are easier to mount and use, making this product user-friendly and suitable for various applications.

Maximum Power Dissipation (Abs): 200 W

With a high maximum power dissipation of 200W, this product can handle high power loads without overheating, making it a reliable choice for demanding applications.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures that the transistor can amplify current effectively, providing reliable performance in various circuit designs.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200 °C, this product can withstand high-temperature environments, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 25 A

The high maximum collector current of 25A allows this transistor to handle large current loads, making it ideal for power amplification and switching applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and reliability in circuit connections, making this product easy to integrate into electronic assemblies.

Nominal Transition Frequency (fT): 40 MHz

With a high nominal transition frequency of 40MHz, this transistor is capable of high-speed switching and amplification, making it suitable for RF and high-frequency applications.

Technical Specifications

Other Function Transistors JANTX2N6438 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Nominal Transition Frequency (fT):

Trade Compliance

JANTX2N6438 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-073-7534, 5961010737534, 5961-01-484-1582, 5961014841582, 5961-01-330-7297, 5961013307297

NIIN

010737534, 014841582, 013307297

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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