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JANTXV2N6277

Onsemi

JANTXV2N6277 by Onsemi

JANTXV2N6277 by Onsemi is an NPN transistor with a max power dissipation of 250W, max collector current of 50A, and min DC current gain of 30. It operates up to 200 °C and has a transition frequency of 30MHz. Ideal for high-power applications in various electronic circuits.

Median Price

$261.040

Lifecycle Status

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6

In-Stock Inventory

1k+

JANTXV2N6277 by Onsemi
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Microchip Technology

USA . 43 parts In-Stock

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Digiode

USA . 106 parts In-Stock

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$247.988

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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Vyrian

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Elcom Components

USA . 4 parts In-Stock

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Electronic Expediters

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.086

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$0.988

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$0.891

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Corphita

USA . 774 parts In-Stock

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$234.936

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Corohmni

South Africa . 423 parts In-Stock

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Microchip USA

USA . 9,046 parts In-Stock

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Component Stockers USA

USA . 24 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,281 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

Austria . 2,963 parts In-Stock

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RGB Technical Solutions

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UHIMA Technologies

Türkiye . 224 parts In-Stock

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TANS Electronics

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Overview

Discover the exceptional quality and reliability of the JANTXV2N6277 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch products that exceed expectations. This NPN transistor offers high power dissipation, low DC current gain, and operates at a maximum temperature of 200 °C. Ideal for a wide range of applications, this transistor provides unmatched performance and efficiency. Upgrade your projects with the JANTXV2N6277 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance.

Configuration: SINGLE

Single configuration transistors are easy to work with and integrate into circuits, making them suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 250 W

High power dissipation allows for the transistor to handle heavy loads and operate efficiently even under high power conditions.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures stable and consistent amplification of signals in various circuits.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high temperature environments without degrading performance.

Maximum Collector Current (IC): 50 A

A high maximum collector current rating of 50 A allows the transistor to handle large currents, making it suitable for high power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and reliability in circuit connections.

Nominal Transition Frequency (fT): 30 MHz

The nominal transition frequency of 30 MHz indicates the speed at which this transistor can switch on and off, making it ideal for high frequency applications.

Technical Specifications

Other Function Transistors JANTXV2N6277 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Nominal Transition Frequency (fT):

Trade Compliance

JANTXV2N6277 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-260-3858, 5961012603858

NIIN

012603858

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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