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JANTXV2N6059

Onsemi

JANTXV2N6059 by Onsemi

JANTXV2N6059 by Onsemi is a NPN Darlington transistor with max power dissipation of 150W, min DC current gain of 750, and max collector current of 12A. It operates up to 200 °C and has a transition frequency of 4MHz. Ideal for high-power applications in various electronic circuits.

Median Price

$111.076

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

JANTXV2N6059 by Onsemi
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Freelance Electronics

USA . 4 parts In-Stock

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$82.921

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American Microsemiconductor Inc.

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.807

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Corohmni

South Africa . 250 parts In-Stock

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Perfect Parts

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Microchip USA

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Austria . 7,794 parts In-Stock

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West Coast Incorporated

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Problanco Electronics

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UHIMA Technologies

Türkiye . 328 parts In-Stock

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Overview

Elevate your electronic designs with the JANTXV2N6059 transistor by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology to meet all your needs. The JANTXV2N6059, a NPN Darlington transistor, offers exceptional performance with a maximum power dissipation of 150W and a minimum DC current gain of 750. Ideal for a wide range of applications, this transistor provides customers with unmatched value, benefits, and advantages. Upgrade your projects today with the JANTXV2N6059 and experience the difference Onsemi brings to the table.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, making this product versatile and suitable for a wide range of electronic projects.

Configuration: DARLINGTON

The Darlington configuration provides a very high current gain, making this transistor ideal for applications requiring high amplification and efficiency.

Maximum Power Dissipation (Abs): 150 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, ensuring reliability and stability in demanding applications.

Minimum DC Current Gain (hFE): 750

A high DC current gain means that small changes in input current result in large changes in output current, making this transistor effective for amplification purposes.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures, making it suitable for use in a wide range of environmental conditions.

Maximum Collector Current (IC): 12 A

With a high maximum collector current, this transistor can handle large currents, making it suitable for power applications where high current capabilities are required.

Terminal Finish: Tin/Lead (Sn/Pb)

The Tin/Lead terminal finish provides good solderability and reliability, ensuring easy and secure connections during assembly.

Nominal Transition Frequency (fT): 4 MHz

A high transition frequency indicates that this transistor can operate at high frequencies, making it suitable for applications requiring fast switching speeds and signal processing.

Technical Specifications

Other Function Transistors JANTXV2N6059 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

750

JESD-609 Code:

e0

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Nominal Transition Frequency (fT):

Trade Compliance

JANTXV2N6059 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-126-3002, 5961011263002

NIIN

011263002

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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