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JANTX2N6058

Onsemi

JANTX2N6058 by Onsemi

JANTX2N6058 by Onsemi is an NPN Darlington transistor with a max power dissipation of 150W, hFE of 750, and IC of 12A. Ideal for high-power applications in industrial electronics due to its high current handling capacity and temperature range up to 200°C.

Median Price

$68.380

Lifecycle Status

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1k+

JANTX2N6058 by Onsemi
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TTI

USA . 47 parts In-Stock

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Arrow

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$67.540

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Verical

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DigiKey

USA . 486 parts In-Stock

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Mouser Electronics

USA . 192 parts In-Stock

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Microchip Technology

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Freelance Electronics

USA . 1 parts In-Stock

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Digiode

USA . 1,975 parts In-Stock

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Vyrian

USA . 1,669 parts In-Stock

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$67.940

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American Microsemiconductor Inc.

USA . 18 parts In-Stock

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NexGen Digital

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Atlantic Semiconductor

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Mil-Aero Solutions, Inc.

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Eagle Technology Solutions

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FDH Electronics

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Corel Iberica Componentes, S.L.

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Beltway Electronics Company

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Andel Nordic

Denmark . 263 parts In-Stock

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Corohmni

South Africa . 51 parts In-Stock

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Corphita

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Microchip USA

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Kulean Microsystems

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West Coast Incorporated

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SupplyDigital Components

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Overview

Discover unparalleled quality and reliability with the JANTX2N6058 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch products like this NPN Darlington transistor that offers exceptional performance in various applications. From high power dissipation to a minimum DC current gain of 750, this transistor is designed to exceed expectations. Experience the benefits of a maximum collector current of 12 A and a nominal transition frequency of 4 MHz, making it an ideal choice for your electronic projects. Trust Onsemi for superior quality and innovation.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, making this product versatile and compatible with a wide range of circuits.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for higher current and power handling capabilities, making this transistor suitable for applications requiring high power dissipation.

Maximum Power Dissipation (Abs): 150 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, making it reliable for demanding applications.

Minimum DC Current Gain (hFE): 750

The high DC current gain ensures efficient amplification and signal processing, making this transistor ideal for use in audio or signal processing circuits.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures without compromising performance, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 12 A

With a high maximum collector current, this transistor can handle large current loads, making it suitable for power switching applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The Tin/Lead terminal finish provides good solderability and conductivity, ensuring reliable connections in circuit assemblies.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency allows for fast switching speeds and high-frequency response, making this transistor suitable for RF applications or high-speed switching circuits.

Technical Specifications

Other Function Transistors JANTX2N6058 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

750

JESD-609 Code:

e0

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Nominal Transition Frequency (fT):

Trade Compliance

JANTX2N6058 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-068-9520, 5961010689520

NIIN

010689520

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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