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JANTX2N3019

Microchip Technology

JANTX2N3019 by Microchip Technology

JANTX2N3019 by Microchip Technology is a NPN BJT transistor with max. power dissipation of 0.8W, hFE of 15, and max. collector-emitter voltage of 80V. It is commonly used for switching applications due to its single configuration and cylindrical package style, suitable for military standards like MIL-19500/391.

Median Price

$9.660

Lifecycle Status

Suppliers In-Stock

40

In-Stock Inventory

1k+

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Avnet

USA . 780 parts In-Stock

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$3.169

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Arrow

USA . 62 parts In-Stock

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$9.541

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$8.775

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Mouser Electronics

USA . 12 parts In-Stock

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$9.780

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$8.890

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Master Electronics

USA . 101 parts In-Stock

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$9.660

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$9.260

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Verical

USA . 100 parts In-Stock

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$12.272

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TEDSS.com

USA . 4 parts In-Stock

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$4.180

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Freelance Electronics

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$6.958

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Digiode

USA . 2,189 parts In-Stock

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$8.692

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Nova Conductors

Japan . 10 parts In-Stock

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$10.084

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$10.084

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DF Sales Co.

USA . 2 parts In-Stock

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$14.000

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DF Sales Co.

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American Microsemiconductor Inc.

USA . 752 parts In-Stock

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$18.900

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NexGen Digital

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Vyrian

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North Shore Components

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Chip Stock

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MISTER SPROCKETS

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IBS Electronics

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$11.108

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ACDS - Activité Composants Distribution Service

France . 89 parts In-Stock

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Manoshevitz Elec. Sales

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Electro Sonic

Canada . 58 parts In-Stock

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$9.140

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$8.520

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$8.520

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PAR Electronics

UK . 33 parts In-Stock

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Beltway Electronics Company

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Odi Ramu Company

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Speed Components Ltd

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Astute Electronics Inc

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Mil-Aero Solutions, Inc.

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Euro-Tech

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Electronic Expediters

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Sunrise Surplus Inc.

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Sogenti Electronics

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Electronics Depot

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R&J Components

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First Choice Components Inc.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Prism Electronics

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Sinequanon

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Resion

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,355 parts In-Stock

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$0.768

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$0.768

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Semicontronic

India . 58 parts In-Stock

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$8.050

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$7.849

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$7.808

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58

$8.050

$7.849

$7.808

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Corphita

USA . 1,138 parts In-Stock

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$8.235

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$8.235

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$8.500

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$8.500

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$8.500

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500

$8.500

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$8.500

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Component Stockers USA

USA . 72 parts In-Stock

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$8.500

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$8.560

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72

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$8.560

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Continental Prestige Electronics

USA . 6,376 parts In-Stock

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$9.615

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$9.423

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$9.615

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$9.423

Corohmni

South Africa . 143 parts In-Stock

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$9.768

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$9.768

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Bastille Electronics

Australia . 92 parts In-Stock

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$10.080

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$9.576

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$8.971

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$8.971

AZTECH Wire

Italy . 705 parts In-Stock

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$19.485

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$19.485

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QUARKTWIN TECHNOLOGY LTD

USA . 12,109 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

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Kulean Microsystems

USA . 5,426 parts In-Stock

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Problanco Electronics

Mexico . 4,753 parts In-Stock

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Argo Parts USA

USA . 4,603 parts In-Stock

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Microchip USA

USA . 3,647 parts In-Stock

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West Coast Incorporated

USA . 2,809 parts In-Stock

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TANS Electronics

Latvia . 639 parts In-Stock

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UHIMA Technologies

Türkiye . 211 parts In-Stock

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Kepictronics

USA . 169 parts In-Stock

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Perfect Parts

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Overview

Discover the superior quality and reliability of the JANTX2N3019 by Microchip Technology, a leading manufacturer in the industry. Ideal for switching applications, this NPN Small Signal Bipolar Junction Transistor offers exceptional performance and efficiency. With a maximum power dissipation of 0.8W and a maximum collector current of 1A, it provides unmatched value and benefits to customers seeking high-quality components. Trust Microchip Technology for cutting-edge solutions that will elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: METAL

This product is durable and can withstand harsh environmental conditions, making it suitable for industrial applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing versatility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and makes this transistor easy to integrate into various electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic circuits.

Package Shape: ROUND

The round package shape allows for easy installation and minimizes the risk of short circuits in compact designs.

Terminal Form: WIRE

With wire terminals, this transistor can be easily connected to other components, simplifying the assembly process.

No. of Elements: 1

This transistor has a single element, making it straightforward to understand and use in circuit design.

No. of Terminals: 3

The three terminals provide flexibility in connecting the transistor to external circuitry, enhancing its compatibility with different systems.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8 W, this transistor can handle high power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact form factor, making it ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures stable and reliable performance in amplification applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand elevated temperatures, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating of 80 V allows this transistor to handle high voltages safely in electronic circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making this product a dependable choice for various applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle high currents efficiently, making it suitable for power applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and corrosion resistance, ensuring a secure electrical connection.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and component placement, making it easier to integrate into electronic designs.

Case Connection: COLLECTOR

The collector case connection enhances heat dissipation and electrical performance, ensuring the reliability of the transistor.

Reference Standard: MIL-19500/391

Compliant with MIL-19500/391 standards, this transistor meets strict quality and reliability requirements for military and aerospace applications.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor can operate at high frequencies, making it suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) JANTX2N3019 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Qualified

Reference Standard:

MIL-19500/391

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

JANTX2N3019 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

NSN

5961-00-240-2810, 5961002402810, 5961-01-244-7494, 5961012447494, 5961-01-341-9617, 5961013419617, 5961-01-148-1542, 5961011481542, 5961-01-187-8067, 5961011878067, 5961-01-249-1026, 5961012491026

NIIN

002402810, 012447494, 013419617, 011481542, 011878067, 012491026

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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