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AT21CS01-SSHM10-B

Microchip Technology

AT21CS01-SSHM10-B by Microchip Technology

AT21CS01-SSHM10-B by Microchip Technology is a small outline EEPROM with 128x8 organization, operating at 1.8V. It features I2C control byte 1010DDDR and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory in compact form factor.

Median Price

$0.240

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 15,900 parts In-Stock

1+ parts

$0.240

100+ parts

$0.220

1k+ parts

$0.210

10k+ parts

$0.200

15,900

$0.240

$0.220

$0.210

$0.200

DigiKey

USA . 181 parts In-Stock

1+ parts

$0.240

100+ parts

$0.238

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-

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181

$0.240

$0.238

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-

Adafruit Industries

USA . 15 parts In-Stock

1+ parts

$0.286

100+ parts

$0.286

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$0.286

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-

15

$0.286

$0.286

$0.286

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RS (Exports)

UK . 1,700 parts In-Stock

1+ parts

-

100+ parts

$0.131

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1,700

-

$0.131

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 365 parts In-Stock

1+ parts

$0.238

100+ parts

-

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365

$0.238

-

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NAC Semi

USA . 12,700 parts In-Stock

1+ parts

$0.260

100+ parts

$0.240

1k+ parts

$0.210

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-

12,700

$0.260

$0.240

$0.210

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Nova Conductors

Japan . 40 parts In-Stock

1+ parts

$0.280

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40

$0.280

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Vyrian

USA . 5,310 parts In-Stock

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5,310

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VNN

France . 4,289 parts In-Stock

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4,289

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vigor

Singapore . 3,403 parts In-Stock

1+ parts

$0.200

100+ parts

-

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3,403

$0.200

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Ampacity Inc.

Singapore . 5,461 parts In-Stock

1+ parts

$0.212

100+ parts

-

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5,461

$0.212

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Corphita

USA . 809 parts In-Stock

1+ parts

$0.225

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809

$0.225

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Continental Prestige Electronics

USA . 6,231 parts In-Stock

1+ parts

$0.280

100+ parts

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10k+ parts

$0.274

6,231

$0.280

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-

$0.274

Argo Parts USA

USA . 4,287 parts In-Stock

1+ parts

$0.280

100+ parts

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1k+ parts

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10k+ parts

$0.272

4,287

$0.280

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$0.272

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.280

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50

$0.280

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Advanced Electronics

New Zealand . 15 parts In-Stock

1+ parts

$0.286

100+ parts

$0.286

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$0.286

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15

$0.286

$0.286

$0.286

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Corohmni

South Africa . 10 parts In-Stock

1+ parts

$3.843

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10

$3.843

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Aztec Data Supply Inc.

USA . 540 parts In-Stock

1+ parts

$4.556

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540

$4.556

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iodParts Technologies Inc.

India . 12,800 parts In-Stock

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12,800

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QUARKTWIN TECHNOLOGY LTD

USA . 12,380 parts In-Stock

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12,380

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Marpe Global Electronics

Taiwan . 5,140 parts In-Stock

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5,140

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QualityLine Systems

Poland . 5,140 parts In-Stock

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5,140

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XL Components Corporation

Australia . 5,140 parts In-Stock

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5,140

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Supply Digital

USA . 2,007 parts In-Stock

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2,007

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Overview

Unlock endless possibilities with the AT21CS01-SSHM10-B by Microchip Technology, a high-quality EEPROM that offers reliability and durability. Perfect for a wide range of applications, this product boasts a compact design and efficient performance. Experience seamless operation with its synchronous mode and open-drain output characteristics. Trust in the value and benefits of this industrial-grade memory solution, offering fast write/erase cycles and a vast memory density. Elevate your projects with the AT21CS01-SSHM10-B and discover the true meaning of quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the EEPROM, making it suitable for various environments.

Surface Mount: YES

The surface mount capability allows for easy and secure installation on PCBs, saving space and facilitating automated manufacturing processes.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and efficient data transfer, making the EEPROM ideal for applications requiring synchronized communication.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V reduces power consumption and heat generation, contributing to energy efficiency.

No. of Terminals: 8

Having 8 terminals provides sufficient connectivity options while keeping the design compact and versatile.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the EEPROM can withstand extended use in industrial settings without overheating.

Organization: 128X8

The 128x8 organization structure allows for efficient data storage and retrieval, making the EEPROM suitable for various applications requiring reliable memory management.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics provide flexibility in interfacing with other devices and systems, enhancing compatibility and functionality.

Technology: CMOS

The CMOS technology used in the EEPROM ensures low power consumption, high speed, and reliable operation, making it a cost-effective and efficient choice.

Endurance: 1000000 Write/Erase Cycles

With a high endurance of 1,000,000 write/erase cycles, the EEPROM offers long-lasting performance and reliability for frequent data updates and storage.

Technical Specifications

EEPROM AT21CS01-SSHM10-B attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

1.8

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.0000025 Amp

Maximum Supply Current:

.5 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

AT21CS01-SSHM10-B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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