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25LC128T-E/ST

Microchip Technology

25LC128T-E/ST by Microchip Technology

25LC128T-E/ST by Microchip is a 16Kx8 EEPROM with SPI interface, operating at 5V. It offers 1M Write/Erase cycles, -40 to 125°C temp range, and AEC-Q100 screening for automotive applications. With a compact size of 4.4mm x 3mm and low standby current of 0.000005A, it's ideal for space-constrained automotive electronics requiring reliable non-volatile memory storage.

Median Price

$1.260

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 232,300 parts In-Stock

1+ parts

$1.260

100+ parts

$1.160

1k+ parts

$1.100

10k+ parts

$1.040

232,300

$1.260

$1.160

$1.100

$1.040

Distributors (In-Stock)

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Chip Stock

USA . 4,600 parts In-Stock

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4,600

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Vyrian

USA . 3,829 parts In-Stock

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3,829

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Nova Conductors

Japan . 300 parts In-Stock

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300

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VNN

France . 264 parts In-Stock

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264

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Distributors (Availability)

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Microchip USA

USA . 5,087 parts In-Stock

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$8.040

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5,087

$8.040

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Component Stockers USA

USA . 6,265 parts In-Stock

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$13.600

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$13.600

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AZTECH Wire

Italy . 1,183 parts In-Stock

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$15.320

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Ampacity Inc.

Singapore . 466 parts In-Stock

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$29.000

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466

$29.000

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Kepictronics

USA . 19,324 parts In-Stock

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RC Electronics

USA . 3,240 parts In-Stock

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$1.100

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$1.040

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$1.020

3,240

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$1.020

Marpe Global Electronics

Taiwan . 1,798 parts In-Stock

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QualityLine Systems

Poland . 1,798 parts In-Stock

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XL Components Corporation

Australia . 1,798 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Overview

Unlock endless possibilities with the 25LC128T-E/ST by Microchip Technology, a high-quality EEPROM that offers reliable performance for a wide range of applications. With its durable construction and automotive-grade technology, this EEPROM is designed to withstand harsh environments while providing fast data transfer speeds. Whether you're in the automotive industry or working on IoT projects, this versatile memory IC will exceed your expectations with its million write/erase cycles and low power consumption. Upgrade your designs with the 25LC128T-E/ST and experience seamless functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, making it suitable for various operating environments.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Screening Level: AEC-Q100

Meets automotive standards for reliability and performance, ensuring it is suitable for automotive applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage, making it compatible with common power supplies.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, making it suitable for demanding applications.

Memory Density: 131072 bit

Offers a large memory capacity for storing data and information.

Endurance: 1000000 Write/Erase Cycles

Provides a high number of write/erase cycles, ensuring long-lasting performance and reliability.

Serial Bus Type: SPI

Utilizes a popular serial bus interface, enabling easy integration with a wide range of systems.

Technical Specifications

EEPROM 25LC128T-E/ST attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

10 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

25LC128T-E/ST Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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