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25AA160AT-I/SN

Microchip Technology

25AA160AT-I/SN by Microchip Technology

25AA160AT-I/SN by Microchip Technology is a SPI EEPROM with 2Kx8 organization, operating at 10MHz. It has a memory density of 16384 bits and can endure up to 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 7,776 parts In-Stock

1+ parts

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7,776

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Vyrian

USA . 6,875 parts In-Stock

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6,875

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VNN

France . 684 parts In-Stock

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684

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Nova Conductors

Japan . 58 parts In-Stock

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58

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 406 parts In-Stock

1+ parts

$3.783

100+ parts

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406

$3.783

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AZTECH Wire

Italy . 70 parts In-Stock

1+ parts

$8.320

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70

$8.320

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Ampacity Inc.

Singapore . 984 parts In-Stock

1+ parts

$28.000

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984

$28.000

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Argo Parts USA

USA . 5,390 parts In-Stock

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5,390

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Fulton Briggs Corp.

USA . 4,634 parts In-Stock

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4,634

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Continental Prestige Electronics

USA . 3,559 parts In-Stock

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3,559

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Netroflash

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of reliable data storage with the 25AA160AT-I/SN by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers top-quality EEPROM products designed for various applications. This small outline package offers ease of installation and a wide operating temperature range, making it versatile for industrial use. With features like hardware write protection and high endurance, this EEPROM ensures data integrity and longevity. Trust Microchip Technology to provide innovative solutions that meet your needs for efficient data storage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM chip, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Easy to mount on PCBs, saving space and making the integration process simpler.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal supply voltage that helps in efficient operation and performance of the EEPROM chip.

Operating Mode: SYNCHRONOUS

Allows for precise synchronization of data transfers, improving overall system performance.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments without performance degradation, suitable for industrial applications.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures reliability and longevity of the EEPROM chip, making it a cost-effective choice for long-term use.

Serial Bus Type: SPI

Uses a popular and widely supported serial bus interface, enabling easy communication with other devices in the system.

Technical Specifications

EEPROM 25AA160AT-I/SN attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

10 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

6 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

25AA160AT-I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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