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MKE38RK600DFELB

Littelfuse

MKE38RK600DFELB by Littelfuse

The Littelfuse MKE38RK600DFELB is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features a built-in diode, 50A max drain current, and 0.045 ohm max on resistance. With a package style of small outline and operating temperature up to 150°C, it is suitable for various power electronics designs.

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Overview

Discover the MKE38RK600DFELB by Littelfuse, a high-quality N-CHANNEL Power FET with a built-in diode designed for switching applications. With a maximum DS breakdown voltage of 600V and an avalanche energy rating of 1950 mJ, this transistor offers reliable performance in various electronic systems. Littelfuse's expertise in semiconductor technology ensures superior quality and durability. Whether you're working on industrial machinery or renewable energy projects, this FET provides the efficiency and power you need. Upgrade your designs with the MKE38RK600DFELB and experience the unmatched value and benefits it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation properties, which can help prevent electrical shorts and improve overall durability of the transistor.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors are known for their high efficiency and fast switching speeds, making them suitable for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps prevent damage from reverse voltage or inductive loads, enhancing the reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for high-speed on/off transitions, making it ideal for controlling power flow.

Surface Mount: YES

Surface mount capability allows for easy and quick installation on PCBs, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 600 V

High breakdown voltage ensures reliable operation in high voltage applications, offering protection against voltage spikes and surges.

Package Shape: RECTANGULAR

Rectangular package shape is generally more space-efficient and easier to handle during assembly, improving overall product design.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easy to control and have low on-state resistance, providing high efficiency and improved performance.

Avalanche Energy Rating (EAS): 1950 mJ

High avalanche energy rating indicates robustness against sudden voltage spikes or overloads, ensuring reliable operation under extreme conditions.

Maximum Drain Current (Abs) (ID): 50 A

High maximum drain current rating allows for handling large currents, making this transistor suitable for high-power applications.

No. of Terminals: 9

Multiple terminals provide flexibility in circuit design, enabling various connection options for different applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact electronic devices or systems with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers reliable and efficient performance with low gate leakage, improving overall power efficiency.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in harsh environments or under high temperature conditions, ensuring long-term reliability.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material known for its stable electrical properties, ensuring consistent performance over time.

Maximum Drain-Source On Resistance: 0.045 ohm

Low drain-source on resistance results in minimal power loss and efficient power conversion, making this transistor suitable for high-current applications.

Terminal Position: DUAL

Dual terminal position provides enhanced thermal management and improved current handling capabilities, ensuring reliable operation under heavy loads.

Case Connection: ISOLATED

Isolated case connection helps prevent electrical shorts and enhances safety during operation, ensuring reliable performance in demanding applications.

Reference Standard: UL RECOGNIZED

UL recognition indicates that the transistor meets industry safety standards and requirements, ensuring quality and reliability in electrical systems.

Technical Specifications

Power Field Effect Transistors (FET) MKE38RK600DFELB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Littelfuse

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY

Avalanche Energy Rating (EAS):

1950 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

50 A

Maximum Drain Current (ID):

50 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G9

No. of Elements:

1

No. of Terminals:

9

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Reference Standard:

UL RECOGNIZED

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MKE38RK600DFELB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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