Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Littelfuse MKE38P600LB is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 2 elements in series with built-in diode, GULL WING terminals, and operates in enhancement mode. With a max drain current of 50A and 0.045 ohm on-resistance, it offers reliable performance in a small outline package.
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The use of plastic/epoxy for the package body material ensures durability and protection for the internal components of the FET.
N-channel FETs typically have lower ON resistance and faster switching speeds, making them suitable for high-performance applications.
This configuration allows for efficient power management and control in circuits requiring multiple elements with built-in diode functionality.
Designed specifically for switching applications, this FET offers high efficiency and reliability for on/off states in electronic devices.
The surface mount capability of this FET makes it easy to integrate into compact circuit board designs, saving space and improving overall system performance.
With a high minimum breakdown voltage, this FET is suitable for applications requiring robust electrical insulation and protection against voltage spikes.
The rectangular package shape provides a standardized form factor for easy installation and compatibility with various mounting options.
The gull wing terminal form allows for secure soldering connections, ensuring stable electrical performance and reliability under harsh operating conditions.
Enhancement mode FETs offer precise control over the flow of current, making them ideal for applications requiring low power consumption and high switching speeds.
The inclusion of two elements within this FET provides redundancy and increased efficiency in managing power distribution within a circuit.
The high avalanche energy rating of this FET ensures protection against voltage spikes and overloads, contributing to overall system reliability.
With nine terminals, this FET offers versatile connection options and compatibility for a wide range of circuit designs and configurations.
The small outline package style of this FET allows for compact and space-saving integration in modern electronic devices and systems.
The metal-oxide semiconductor technology used in this FET guarantees high performance, low power consumption, and efficient operation in various applications.
With a high maximum operating temperature, this FET can withstand elevated temperatures without compromising performance, making it suitable for industrial and automotive applications.
Silicon-based transistor elements offer stable and reliable performance, ensuring consistent operation and longevity in electronic systems.
The low minimum operating temperature of this FET makes it suitable for use in environments with extreme cold conditions, providing versatility and reliability.
The high maximum drain current rating of this FET allows for efficient power handling and control in circuits with heavy load requirements.
With a low on-resistance value, this FET minimizes power loss and heat generation, enhancing overall system efficiency and performance.
The dual terminal position offers flexibility in connecting the FET in different circuit configurations, allowing for customization and optimization of electrical connections.
The isolated case connection provides enhanced safety and protection against electrical hazards, ensuring reliable performance in diverse operating conditions.
Being UL recognized ensures that this FET meets strict safety and quality standards, making it a reliable choice for a wide range of electrical applications.
Power Field Effect Transistors (FET) MKE38P600LB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Littelfuse
Additional Features:
Avalanche Energy Rating (EAS):
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Configuration:
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Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
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Maximum Operating Temperature:
Minimum Operating Temperature:
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MKE38P600LB Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.
1N4148WS
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
SS14
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
USB3320C-EZK-TR
Standard Microsystems
INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;
1N4148WT
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS140T3G
Onsemi
MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.
LL4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
General Semiconductor
BSS138K-13
Diodes Incorporated
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
LM107H
Linear Technology
LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.
RN41N-I/RM
Microchip Technology
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
LM358N
STMicroelectronics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SMBJ18CA
Semitron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
BSS84PH6327XTSA2
Infineon Technologies
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
Digitron Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
DMG2305UX-13
DMG2305UX-13 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 1.4W. This MOSFET is surface mountable, with Gull Wing terminals and can withstand temperatures up to 150°C.
SQM40P10-40L_GE3
The Vishay Intertechnology SQM40P10-40L_GE3 is a P-channel power FET with 100V DS breakdown voltage and 160A max pulsed drain current. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Features include a built-in diode, 0.04 ohm max RDS(on), and small outline package style.
BSP315PH6327
Infineon's BSP315PH6327 is a P-CHANNEL FET with 60V DS Breakdown Voltage and 4.68A IDM. Ideal for automotive applications, it features a built-in diode, 0.8 ohm RDS(on), and 24mJ EAS rating. AEC-Q101 compliant, this MOSFET has a small outline package and matte tin finish for enhanced performance in harsh environments.
IRF7410TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
IRLML6346TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
IRF530A
The Onsemi IRF530A is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 14A Max ID. Ideal for SWITCHING applications, it features a 0.11 ohm Drain-Source Resistance and operates in ENHANCEMENT MODE up to 175°C.
SI4532DY
Fairchild Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;
IRFZ44NS
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;
IRLR3110ZTRPBF
IRLR3110ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling up to 250A pulsed drain current. With 0.014 ohm max on-resistance and 175°C max operating temp, it's suitable for high-power systems.
IRF7205TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Peak Reflow Temperature (C): 260; JESD-30 Code: R-PDSO-G8;
STP55NF06
STP55NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
IRF640
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; No. of Terminals: 3;
AUIRF3205Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 440 A;
IRF540STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
IRFD110PBF
Power Field-Effect Transistors; Qualification: Not Qualified; Terminal Finish: PURE MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 1 A; Peak Reflow Temperature (C): 260;
SISS71DN-T1-GE3
Vishay Intertechnology's SISS71DN-T1-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. Featuring 40A max pulsed drain current and 0.082 ohm max on-resistance, it operates in enhancement mode with -50 to 150°C temperature range. Suitable for surface mount designs, this transistor offers high performance in a compact square package.
BBS3002-DL-1E
Sanyo Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Package Shape: RECTANGULAR; Case Connection: DRAIN;
FDD6637
FDD6637 by Onsemi is a P-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 61mJ, with an ID of 55A and 0.0116 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power switching tasks.
SI7155DP-T1-GE3
Vishay Intertechnology's SI7155DP-T1-GE3 is a P-channel FET with 40V DS breakdown voltage and 200A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 104W. The MOSFET features a drain-source on resistance of 0.0046 ohm and can withstand temperatures from -55 to 150°C.
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 122 ns; Transistor Element Material: SILICON;
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MKE38RK600DFELB
Littelfuse
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: ISOLATED; Maximum Drain-Source On Resistance: .045 ohm;
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; No. of Terminals: 9;
MKE38RK600DFELB-TRR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 50 A; Avalanche Energy Rating (EAS): 1950 mJ; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
MKE38P600LB-TRR
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Minimum DS Breakdown Voltage: 600 V; Transistor Application: SWITCHING;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 600 V; No. of Terminals: 9;
MKE38P600LB
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 600 V; Transistor Application: SWITCHING;
MKE38P600LB-TUB
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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