Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
IXTA10P50P-TRL by Littelfuse is a P-CHANNEL FET with 500V DS Breakdown Voltage, 30A IDM, and 1500mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150°C temperature range.
Median Price
$7.915
Lifecycle Status
Suppliers In-Stock
11
In-Stock Inventory
1k+
Mouser Electronics
1+ parts
$4.600
100+ parts
-
1k+ parts
10k+ parts
Farnell
$5.720
$4.080
Verical
$6.540
$3.500
$3.470
$3.400
Element14
$9.290
$6.420
$5.160
Newark
$9.920
$4.750
$4.470
$4.280
DigiKey
$10.120
$4.847
Nova Conductors
$4.800
Vyrian
Cyclops Electronics Ltd
ComSIT Distribution GmbH
IBS Electronics
$7.445
$7.374
Advanced Electronics
$0.355
$0.338
Aztec Data Supply Inc.
$0.403
Corohmni
$1.460
Aranea Global
$4.704
$4.516
Semicontronic
$4.860
$4.738
$4.714
Ampacity Inc.
Continental Prestige Electronics
$5.870
$4.400
Microchip USA
$29.139
QUARKTWIN TECHNOLOGY LTD
Argo Parts USA
Authorized Procurement Solutions
Perfect Parts
The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and robustness are important factors.
P-channel FETs are known for their high efficiency and low power consumption, making them suitable for power-saving applications.
The built-in diode simplifies circuit design and provides reverse polarity protection, enhancing the reliability of the product.
Designed for switching applications, this FET offers fast switching speeds and low on-resistance, making it ideal for high-frequency circuits.
Surface mount technology allows for easy and space-efficient PCB assembly, making the product suitable for compact electronic devices.
With a high breakdown voltage, this FET can handle high-power applications and provides protection against voltage spikes.
The rectangular shape of the package ensures efficient heat dissipation and allows for easy mounting on a PCB.
The gull-wing terminals provide a secure connection and make soldering easier during the assembly process.
Enhancement mode FETs offer easy control of the switching operation and can be turned on and off easily using a voltage signal.
The high pulsed drain current rating allows for handling of peak current loads, making the FET suitable for applications with transient power demands.
The high avalanche energy rating ensures the FET can withstand voltage spikes and transient conditions without damage, improving overall reliability.
The two-terminal configuration simplifies circuit design and reduces component count, making the product cost-effective and easy to integrate.
With a high power dissipation rating, this FET can handle high power densities and operate reliably under demanding conditions.
The small outline package saves space and allows for higher component density on the PCB, making it ideal for compact electronic designs.
MOSFET technology offers high efficiency, low power losses, and fast switching speeds, making it suitable for a wide range of power applications.
With a high operating temperature range, this FET can withstand elevated temperatures and is suitable for use in harsh environmental conditions.
Silicon-based transistors offer excellent performance, reliability, and efficiency, making this FET a dependable choice for various applications.
The wide temperature range allows the FET to operate reliably in extreme cold conditions, making it suitable for outdoor and industrial applications.
Matte tin finish on the terminals provides a reliable and corrosion-resistant connection, ensuring long-term performance and stability.
With a high drain current rating, this FET can handle high current loads, making it suitable for power-sensitive applications.
The low on-resistance of 1 ohm reduces power losses and heat generation, improving efficiency and performance in high-current applications.
The single terminal position simplifies circuit layout and reduces complexity, making the product user-friendly and easy to integrate.
The drain case connection ensures efficient heat dissipation and allows for reliable operation under high-power conditions.
The short reflow time of 10 seconds minimizes thermal stress on the component during assembly, ensuring long-term reliability.
The peak reflow temperature of 260°C ensures proper solder joint formation and reliable assembly during the manufacturing process.
The low feedback capacitance of 42 pF minimizes signal distortion and improves high-frequency performance in switching applications.
Power Field Effect Transistors (FET) IXTA10P50P-TRL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Littelfuse
Additional Features:
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
IXTA10P50P-TRL Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.
2N2222A
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
SMMBT3904LT1G
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
RK73H2ATTD10R0F
Koa Speer Electronics
RK73H2ATTD10R0F by Koa Speer Electronics is a 0805 SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.25 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V.
LM358DT
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
DS18B20Z/T&R
Maxim Integrated
DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.
LM2931AZ-5.0G
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
General Transistor
SS14
Jinan Jingheng Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5819HW-7-F
Diodes Incorporated
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
Won-top Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Rfe International
BSS138
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
General Semiconductor
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
1N4148WT
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Terry Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;
C1210C104K5RACTU
KEMET Corporation
KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.
IRF640
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 3; Case Connection: DRAIN;
IRF530PBF
Vishay Intertechnology
Vishay Intertechnology's IRF530PBF is a N-CHANNEL FET with 100V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 88W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
STP11NK50ZFP
STMicroelectronics
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
NX3008NBK,215
NXP Semiconductors
NX3008NBK,215 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.4A and power dissipation of 0.42W. Ideal for applications requiring high efficiency in power management systems due to its single configuration and enhancement mode operation at up to 150°C operating temperature.
IRF640STRLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 2; Case Connection: DRAIN;
FQB22P10TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Elements: 1; Terminal Finish: MATTE TIN;
NDT2955
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTTFS5116PLTAG
NTTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 76A and EAS of 45mJ, operating in ENHANCEMENT MODE. With a compact SQUARE package style and high power dissipation of 40W, it offers reliable performance in various electronic systems.
BSC340N08NS3GATMA1
Infineon Technologies
Infineon's BSC340N08NS3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 92A IDM, 20mJ EAS, and 0.034 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a max power dissipation of 32W in a small outline package.
BSC190N15NS3GATMA1
Infineon BSC190N15NS3GATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. Features include 200A IDM, 170mJ EAS, and 0.019 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 125W in a small outline package.
IRF3205ZLPBF
IRF3205ZLPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 440A IDM. Ideal for SWITCHING applications, it features a 0.0065 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE. With a max power dissipation of 170W, this transistor is designed for high-performance electronic systems.
IRFP460PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
BSP297H6327XTSA1
Infineon's BSP297H6327XTSA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for power applications. Features include 2.64A IDM, 1.8Ω RDS(on), and AEC-Q101 compliance. Suitable for enhancement mode operation in automotive electronics due to its high reliability and performance.
IRF640PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 18 A; Terminal Form: THROUGH-HOLE;
AUIRFZ44N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
IRLML6402TRPBF
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
SPW47N60C3FKSA1
SPW47N60C3FKSA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a single configuration with built-in diode, 47A max drain current, and 0.07 ohm max on-resistance. Ideal for high-power applications requiring efficient switching and high current handling capabilities.
IRF5210PBF
IRF5210PBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE. With a Drain Current of 40A and 0.06 ohm On Resistance, it offers reliable performance in various electronic systems.
IRF3710STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; JESD-30 Code: R-PSSO-G2;
First Components International
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (Abs) (ID): 18 A; Operating Mode: ENHANCEMENT MODE;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
IXTA96P085T
IXYS Corporation
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
Littelfuse
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
IXTA3N120HV-TRL
Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: Matte Tin (Sn);
IXTA3N120HV
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 10; Moisture Sensitivity Level (MSL): 1;
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn); Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 10;
IXTA3N150HV-TRL
Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: Matte Tin (Sn); Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
IXTA3N120
IXTA3N120 by Littelfuse is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 12A and EAS of 700mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and Matte Tin finish, it offers reliable performance from -55 to 150 °C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IXTA44P15T
IXTA44P15T by Littelfuse is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 130A IDM and 1000mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 298W and -55 to 150°C temperature range, it offers high performance in various electronic systems.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Package Shape: RECTANGULAR; Case Connection: DRAIN;
IXTA10P50P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Case Connection: DRAIN; Maximum Operating Temperature: 150 Cel;
The Littelfuse IXTA10P50P is a P-CHANNEL FET with 500V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in diode, 1ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for high-power systems requiring efficient switching capabilities.
IXTA3N150HV
IXTA3N150HV by Littelfuse is a N-CHANNEL FET with 1500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 9A and EAS of 250mJ, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY transistor has GULL WING terminals and a Drain case connection.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; JESD-30 Code: R-PSSO-G2; Package Style (Meter): SMALL OUTLINE;
IXTA3N120-TRR
Power Field-Effect Transistors; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 10; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
IXTA120P065T
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 1000 mJ;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Minimum DS Breakdown Voltage: 65 V; Qualification: Not Qualified;
IXTA120P065T-TRL
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: Matte Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
IXTA76P10T
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Drain Current (Abs) (ID): 76 A; Moisture Sensitivity Level (MSL): 1;
IXTA10P15T
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 10 A;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved