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LBSS138V3.3T3G

Leshan Radio

LBSS138V3.3T3G by Leshan Radio

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Drain Current (Abs) (ID): .2 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Field Effect Transistors (FET) LBSS138V3.3T3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Leshan Radio

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.2 A

Maximum Drain Current (ID):

.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

LBSS138V3.3T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Leshan Radio

Leshan Radio Company, Ltd.(LRC) is a well-known electronic company located in Sichuan province, the center area of China western development. Head office and initial factories are in Leshan, a famous historic and cultural city. New factories and R&D centers are in Chengdu, capital city of Sichuan Province. Since its establishment in 1971, LRC has dedicated half a century to the R&D and manufacturing of semiconductor devices and has grown into a group company with several subsidiary and JV companies

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