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MWI150-12T8T

IXYS Corporation

MWI150-12T8T by IXYS Corporation

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 690 W; Maximum Collector Current (IC): 215 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

Median Price

$811.768

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 7 parts In-Stock

1+ parts

$676.296

100+ parts

-

1k+ parts

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10k+ parts

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7

$676.296

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NAC Semi

USA . 6 parts In-Stock

1+ parts

$947.240

100+ parts

-

1k+ parts

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10k+ parts

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6

$947.240

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 2,792 parts In-Stock

1+ parts

$7.797

100+ parts

-

1k+ parts

$7.485

10k+ parts

$7.485

2,792

$7.797

-

$7.485

$7.485

Microchip USA

USA . 6,065 parts In-Stock

1+ parts

$391.350

100+ parts

-

1k+ parts

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10k+ parts

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6,065

$391.350

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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50

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Perfect Parts

USA . 36 parts In-Stock

1+ parts

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36

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MWI150-12T8T attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X13

No. of Elements:

6

No. of Terminals:

13

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

840 ns

Nominal Turn On Time (ton):

320 ns

Maximum VCEsat:

2.1 V

Trade Compliance

MWI150-12T8T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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