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IXTT110N10L2

IXYS Corporation

IXTT110N10L2 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSSO-G2;

Median Price

$23.997

Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip1Stop

Japan . 300 parts In-Stock

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$27.400

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$14.700

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$14.500

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$27.400

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Verical

USA . 180 parts In-Stock

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$20.594

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Nova Conductors

Japan . 1,000 parts In-Stock

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Chip Stock

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Ampacity Inc.

Singapore . 269 parts In-Stock

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$10.570

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Continental Prestige Electronics

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$18.350

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$14.250

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Microchip USA

USA . 450 parts In-Stock

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$49.450

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QUARKTWIN TECHNOLOGY LTD

USA . 18,571 parts In-Stock

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iodParts Technologies Inc.

India . 7,489 parts In-Stock

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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Aranea Global

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RC Electronics

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Kepictronics

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Perfect Parts

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Technical Specifications

Power Field Effect Transistors (FET) IXTT110N10L2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

3000 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

110 A

Maximum Drain Current (ID):

110 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-268AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

300 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTT110N10L2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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