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IXTN110N20L2

IXYS Corporation

IXTN110N20L2 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 735 W; Maximum Drain Current (Abs) (ID): 100 A; Package Body Material: PLASTIC/EPOXY;

Median Price

$50.735

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 258 parts In-Stock

1+ parts

$49.020

100+ parts

-

1k+ parts

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258

$49.020

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DigiKey

USA . 171 parts In-Stock

1+ parts

$52.450

100+ parts

$35.655

1k+ parts

$34.803

10k+ parts

-

171

$52.450

$35.655

$34.803

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 321 parts In-Stock

1+ parts

$5.008

100+ parts

-

1k+ parts

$4.808

10k+ parts

$4.808

321

$5.008

-

$4.808

$4.808

Continental Prestige Electronics

USA . 300 parts In-Stock

1+ parts

$42.660

100+ parts

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300

$42.660

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Component Stockers USA

USA . 1,620 parts In-Stock

1+ parts

$47.180

100+ parts

$37.650

1k+ parts

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10k+ parts

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1,620

$47.180

$37.650

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Ampacity Inc.

Singapore . 66 parts In-Stock

1+ parts

$57.240

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66

$57.240

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Microchip USA

USA . 2,714 parts In-Stock

1+ parts

$120.359

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2,714

$120.359

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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10,000

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Glotronic Ltd.

UK . 1,965 parts In-Stock

1+ parts

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1,965

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Technical Specifications

Power Field Effect Transistors (FET) IXTN110N20L2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

5000 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

100 A

Maximum Drain Current (ID):

100 A

Maximum Drain-Source On Resistance:

.024 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

275 A

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTN110N20L2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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