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IXTK88N30P

IXYS Corporation

IXTK88N30P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 220 A; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;

Median Price

$12.700

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 15 parts In-Stock

1+ parts

$12.700

100+ parts

$9.940

1k+ parts

$8.390

10k+ parts

$8.390

15

$12.700

$9.940

$8.390

$8.390

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 25 parts In-Stock

1+ parts

$12.564

100+ parts

-

1k+ parts

-

10k+ parts

-

25

$12.564

-

-

-

NAC Semi

USA . 20 parts In-Stock

1+ parts

-

100+ parts

$20.000

1k+ parts

-

10k+ parts

-

20

-

$20.000

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 61 parts In-Stock

1+ parts

$0.324

100+ parts

-

1k+ parts

-

10k+ parts

-

61

$0.324

-

-

-

Microchip USA

USA . 7,930 parts In-Stock

1+ parts

$32.555

100+ parts

-

1k+ parts

-

10k+ parts

-

7,930

$32.555

-

-

-

Perfect Parts

USA . 56 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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56

-

-

-

-

GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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50

-

-

-

-

Authorized Procurement Solutions

USA . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

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Technical Specifications

Power Field Effect Transistors (FET) IXTK88N30P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

2000 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

300 V

Maximum Drain Current (ID):

88 A

Maximum Drain-Source On Resistance:

.04 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

220 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTK88N30P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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