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IXTK21N100

IXYS Corporation

IXTK21N100 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3;

Median Price

$24.540

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 71 parts In-Stock

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$0.326

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Ozdisan Elektronik

Türkiye . 15 parts In-Stock

1+ parts

$24.540

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15

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Fibra_Brandt Electronic GMBH

Germany . 20 parts In-Stock

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20

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NAC Semi

USA . 12 parts In-Stock

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$39.550

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12

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R&J Components

USA . 4 parts In-Stock

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 24 parts In-Stock

1+ parts

$24.950

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24

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GreenTree Electronics

Israel . 50 parts In-Stock

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Perfect Parts

USA . 21 parts In-Stock

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21

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Authorized Procurement Solutions

USA . 15 parts In-Stock

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15

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Technical Specifications

Power Field Effect Transistors (FET) IXTK21N100 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (Abs) (ID):

21 A

Maximum Drain Current (ID):

21 A

Maximum Drain-Source On Resistance:

.55 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

500 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

84 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTK21N100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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