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IXFR64N50P

IXYS Corporation

IXFR64N50P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .095 ohm; Qualification: Not Qualified;

Median Price

$13.760

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

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DigiKey

USA . 20 parts In-Stock

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$13.760

100+ parts

$11.539

1k+ parts

$11.539

10k+ parts

$11.539

20

$13.760

$11.539

$11.539

$11.539

Distributors (In-Stock)

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Bristol Electronics

USA . 27 parts In-Stock

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$13.847

100+ parts

$8.654

1k+ parts

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10k+ parts

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27

$13.847

$8.654

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Dan-Mar Components

USA . 27 parts In-Stock

1+ parts

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27

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Distributors (Availability)

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Andel Nordic

Denmark . 500 parts In-Stock

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$5.504

100+ parts

-

1k+ parts

$5.284

10k+ parts

$5.284

500

$5.504

-

$5.284

$5.284

Microchip USA

USA . 3,861 parts In-Stock

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$46.805

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3,861

$46.805

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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1,965

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Authorized Procurement Solutions

USA . 600 parts In-Stock

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100+ parts

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600

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Perfect Parts

USA . 134 parts In-Stock

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134

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Technical Specifications

Power Field Effect Transistors (FET) IXFR64N50P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

2500 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

37 A

Maximum Drain Current (ID):

37 A

Maximum Drain-Source On Resistance:

.095 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

150 A

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFR64N50P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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