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IXFK26N90

IXYS Corporation

IXFK26N90 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 560 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: SINGLE;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

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150

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Prism Electronics

USA . 5 parts In-Stock

1+ parts

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 144 parts In-Stock

1+ parts

$3.050

100+ parts

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1k+ parts

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144

$3.050

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Andel Nordic

Denmark . 1,000 parts In-Stock

1+ parts

$10.481

100+ parts

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1k+ parts

$10.062

10k+ parts

$10.062

1,000

$10.481

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$10.062

$10.062

Microchip USA

USA . 7,622 parts In-Stock

1+ parts

$50.780

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7,622

$50.780

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Glotronic Ltd.

UK . 1,965 parts In-Stock

1+ parts

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1,965

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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Technical Specifications

Power Field Effect Transistors (FET) IXFK26N90 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

3000 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

900 V

Maximum Drain Current (Abs) (ID):

26 A

Maximum Drain Current (ID):

26 A

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

104 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFK26N90 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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