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IXFA7N100P

IXYS Corporation

IXFA7N100P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260;

Median Price

$6.690

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Mouser Electronics

USA . 297 parts In-Stock

1+ parts

$6.530

100+ parts

$3.480

1k+ parts

$3.210

10k+ parts

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297

$6.530

$3.480

$3.210

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DigiKey

USA . 440 parts In-Stock

1+ parts

$6.540

100+ parts

$3.486

1k+ parts

$3.220

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440

$6.540

$3.486

$3.220

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Newark

USA . 265 parts In-Stock

1+ parts

$6.840

100+ parts

$3.730

1k+ parts

$3.490

10k+ parts

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265

$6.840

$3.730

$3.490

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Element14

Singapore . 225 parts In-Stock

1+ parts

$8.700

100+ parts

$6.630

1k+ parts

$6.360

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225

$8.700

$6.630

$6.360

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Ozdisan Elektronik

Türkiye . 268 parts In-Stock

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$6.095

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268

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TME

Poland . 132 parts In-Stock

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$7.100

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$3.830

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132

$7.100

$3.830

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NAC Semi

USA . 268 parts In-Stock

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$10.350

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$9.560

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268

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$10.350

$9.560

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Prism Electronics

USA . 30 parts In-Stock

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30

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Continental Prestige Electronics

USA . 295 parts In-Stock

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$5.250

100+ parts

$3.930

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295

$5.250

$3.930

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Component Stockers USA

USA . 1,686 parts In-Stock

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$5.530

100+ parts

$3.950

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1,686

$5.530

$3.950

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Andel Nordic

Denmark . 50 parts In-Stock

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$8.820

100+ parts

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$8.467

10k+ parts

$8.467

50

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$8.467

$8.467

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,160 parts In-Stock

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Microchip USA

USA . 5,337 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 536 parts In-Stock

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536

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GreenTree Electronics

Israel . 300 parts In-Stock

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300

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Technical Specifications

Power Field Effect Transistors (FET) IXFA7N100P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

300 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

1.9 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

18 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFA7N100P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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