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HUF76639P3

Intersil

HUF76639P3 by Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain-Source On Resistance: .027 ohm; Transistor Element Material: SILICON;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 955 parts In-Stock

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955

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Vyrian

USA . 874 parts In-Stock

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874

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Distributors (Availability)

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Ampacity Inc.

Singapore . 859 parts In-Stock

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$48.050

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859

$48.050

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A-Z Elektronik GmbH

Germany . 6,350 parts In-Stock

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6,350

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Alle Elektronik GmbH

Germany . 4,233 parts In-Stock

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Supply Digital

USA . 3,037 parts In-Stock

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3,037

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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Corphita

USA . 12 parts In-Stock

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12

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Technical Specifications

Power Field Effect Transistors (FET) HUF76639P3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Intersil

Specs

Additional Features:

ULTRA-LOW RESISTANCE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

51 A

Maximum Drain Current (ID):

51 A

Maximum Drain-Source On Resistance:

.027 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HUF76639P3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Intersil

Japanese semiconductor company Renesas acquired Intersil on February 24, 2017. Intersil Corporation (NASDAQ:ISIL), a wholly owned subsidiary of Renesas Electronics Corporation, is a leading provider of innovative power management and precision analog solutions. The company's products form the building blocks of increasingly intelligent, mobile and power hungry electronics enabling advances in power management to improve efficiency and extend battery life. With a deep portfolio of intellectual property and a rich history of design and process innovation, Intersil is the trusted partner to leading companies in some of the world's largest markets, including the industrial and infrastructure, mobile computing, automotive and aerospace.

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